Mapping hole mobility in PTB7 films at nanoscale

A M Alekseev; A T Yedrissov; B R Ilyassov; G J Hedley; I D W Samuel; S S Kharintsev

doi:10.1088/1757-899X/699/1/012001

Mapping hole mobility in PTB7 films at nanoscale

A M Alekseev, A T Yedrissov, B R Ilyassov, G J Hedley, I D W Samuel, S S Kharintsev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

The nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.

Original language	English
Title of host publication	SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings
Publisher	Institute of Physics Publishing
Number of pages	5
Volume	699
DOIs	https://doi.org/10.1088/1757-899X/699/1/012001
Publication status	Published - 16 Dec 2019
Event	SPM-2019-RCWDFM Joint International Conference - Ekaterinburg, Russian Federation Duration: 25 Aug 2019 → 28 Aug 2019 https://nanocenter.urfu.ru/spm2019rcwdfm

Publication series

Name	IOP Conference Series: Materials Science and Engineering
Volume	699
ISSN (Print)	1757-8981
ISSN (Electronic)	1757-899X

Conference

Conference	SPM-2019-RCWDFM Joint International Conference
Abbreviated title	SPM-2019-RCWDFM
Country/Territory	Russian Federation
City	Ekaterinburg
Period	25/08/19 → 28/08/19
Internet address	https://nanocenter.urfu.ru/spm2019rcwdfm

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Alekseev_2019_IOP_Conf._Ser.__Mater._Sci._Eng._699_012001
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Alekseev, A. M., Yedrissov, A. T., Ilyassov, B. R., Hedley, G. J., Samuel, I. D. W., & Kharintsev, S. S. (2019). Mapping hole mobility in PTB7 films at nanoscale. In SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings (Vol. 699). Article 012001 (IOP Conference Series: Materials Science and Engineering; Vol. 699). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/699/1/012001

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title = "Mapping hole mobility in PTB7 films at nanoscale",

abstract = "The nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.",

author = "Alekseev, {A M} and Yedrissov, {A T} and Ilyassov, {B R} and Hedley, {G J} and Samuel, {I D W} and Kharintsev, {S S}",

note = "Funding: Federal Target Program of MES of Russian Federation, contract 14.575.21.0149 (RFMEFI57517X0149). ; SPM-2019-RCWDFM Joint International Conference, SPM-2019-RCWDFM ; Conference date: 25-08-2019 Through 28-08-2019",

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doi = "10.1088/1757-899X/699/1/012001",

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Alekseev, AM, Yedrissov, AT, Ilyassov, BR, Hedley, GJ, Samuel, IDW & Kharintsev, SS 2019, Mapping hole mobility in PTB7 films at nanoscale. in SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings. vol. 699, 012001, IOP Conference Series: Materials Science and Engineering, vol. 699, Institute of Physics Publishing, SPM-2019-RCWDFM Joint International Conference, Ekaterinburg, Russian Federation, 25/08/19. https://doi.org/10.1088/1757-899X/699/1/012001

Mapping hole mobility in PTB7 films at nanoscale. / Alekseev, A M; Yedrissov, A T; Ilyassov, B R et al.
SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings. Vol. 699 Institute of Physics Publishing, 2019. 012001 (IOP Conference Series: Materials Science and Engineering; Vol. 699).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Mapping hole mobility in PTB7 films at nanoscale

AU - Alekseev, A M

AU - Yedrissov, A T

AU - Ilyassov, B R

AU - Hedley, G J

AU - Samuel, I D W

AU - Kharintsev, S S

N1 - Funding: Federal Target Program of MES of Russian Federation, contract 14.575.21.0149 (RFMEFI57517X0149).

PY - 2019/12/16

Y1 - 2019/12/16

N2 - The nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.

AB - The nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.

U2 - 10.1088/1757-899X/699/1/012001

DO - 10.1088/1757-899X/699/1/012001

M3 - Conference contribution

VL - 699

T3 - IOP Conference Series: Materials Science and Engineering

BT - SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings

PB - Institute of Physics Publishing

T2 - SPM-2019-RCWDFM Joint International Conference

Y2 - 25 August 2019 through 28 August 2019

ER -

Alekseev AM, Yedrissov AT, Ilyassov BR, Hedley GJ, Samuel IDW, Kharintsev SS. Mapping hole mobility in PTB7 films at nanoscale. In SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings. Vol. 699. Institute of Physics Publishing. 2019. 012001. (IOP Conference Series: Materials Science and Engineering). doi: 10.1088/1757-899X/699/1/012001

Mapping hole mobility in PTB7 films at nanoscale

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