Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

Menglu Chen; Xinzheng Lan; Margaret H. Hudson; Guohua Shen; Peter B. Littlewood; Dmitri V. Talapin; Philippe Guyot-Sionnest

doi:10.1039/d1tc05202k

Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

Menglu Chen^*, Xinzheng Lan, Margaret H. Hudson, Guohua Shen, Peter B. Littlewood, Dmitri V. Talapin, Philippe Guyot-Sionnest^*

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1S_e state charging and a relatively high mobility (1-10 cm² V⁻¹ s⁻¹), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 − x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1S_e. This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of ∼55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1S_e state.

Original language	English
Pages (from-to)	13771-13777
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	10
Issue number	37
Early online date	20 Jan 2022
DOIs	https://doi.org/10.1039/d1tc05202k
Publication status	E-pub ahead of print - 20 Jan 2022

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Copyright © 2024 the Author(s). This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1039/d1tc05202k.
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@article{d4d8af0cffbc4e63885522e01388c8f4,

title = "Magnetoresistance of high mobility HgTe quantum dot films with controlled charging",

abstract = "The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1-10 cm2 V−1 s−1), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 − x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1Se. This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of ∼55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1Se state.",

author = "Menglu Chen and Xinzheng Lan and Hudson, {Margaret H.} and Guohua Shen and Littlewood, {Peter B.} and Talapin, {Dmitri V.} and Philippe Guyot-Sionnest",

note = "Funding: We thank Christopher Melnychuk for very useful discussions. This work was supported by the National Natural Science Foundation of China under grant number 62105022, the University of Chicago Materials Research Science and Engineering Center, which was funded by the National Science Foundation under award number DMR1420709, and by the Department of Defense (DOD) Air Force Office of Scientific Research under grant number FA9550-18-1-0099.",

year = "2022",

month = jan,

day = "20",

doi = "10.1039/d1tc05202k",

language = "English",

volume = "10",

pages = "13771--13777",

journal = "Journal of Materials Chemistry C",

issn = "2050-7526",

publisher = "ROYAL SOC CHEMISTRY",

number = "37",

}

TY - JOUR

T1 - Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

AU - Chen, Menglu

AU - Lan, Xinzheng

AU - Hudson, Margaret H.

AU - Shen, Guohua

AU - Littlewood, Peter B.

AU - Talapin, Dmitri V.

AU - Guyot-Sionnest, Philippe

N1 - Funding: We thank Christopher Melnychuk for very useful discussions. This work was supported by the National Natural Science Foundation of China under grant number 62105022, the University of Chicago Materials Research Science and Engineering Center, which was funded by the National Science Foundation under award number DMR1420709, and by the Department of Defense (DOD) Air Force Office of Scientific Research under grant number FA9550-18-1-0099.

PY - 2022/1/20

Y1 - 2022/1/20

N2 - The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1-10 cm2 V−1 s−1), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 − x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1Se. This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of ∼55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1Se state.

AB - The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1-10 cm2 V−1 s−1), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 − x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1Se. This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of ∼55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1Se state.

UR - https://search.chorusaccess.org/?q=10.1039%2Fd1tc05202k&doi=t

U2 - 10.1039/d1tc05202k

DO - 10.1039/d1tc05202k

M3 - Article

AN - SCOPUS:85132637747

SN - 2050-7526

VL - 10

SP - 13771

EP - 13777

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 37

ER -

Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

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