Abstract
Edge-emitting coupled-cavity semiconductor lasers employing a deeply etched Bragg reflector at one facet have been realized. The sidemode suppression ratio (SMSR) and wavelength tuning were investigated as a function of low level current injection. A single-mode tuning range of 3 nm centered around 977 nm displaying an SMSR better than 20 dB was obtained for tuning currents in the milliampere range.
| Original language | English |
|---|---|
| Journal | IEEE Photonics Technology Letters |
| Volume | 17 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2005 |
Keywords
- integrated optics
- laser tuning
- semiconductor lasers
- DESIGN
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