Low Tuning Current Semiconductor Coupled-Cavity Lasers Incorporating Bragg Reflectors

DH Brown; MB Flynn; Liam O'Faolain; Thomas Fraser Krauss

doi:10.1109/LPT.2005.856371

Low Tuning Current Semiconductor Coupled-Cavity Lasers Incorporating Bragg Reflectors

DH Brown, MB Flynn, Liam O'Faolain, Thomas Fraser Krauss

Research output: Contribution to journal › Article › peer-review

Abstract

Edge-emitting coupled-cavity semiconductor lasers employing a deeply etched Bragg reflector at one facet have been realized. The sidemode suppression ratio (SMSR) and wavelength tuning were investigated as a function of low level current injection. A single-mode tuning range of 3 nm centered around 977 nm displaying an SMSR better than 20 dB was obtained for tuning currents in the milliampere range.

Original language	English
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2005.856371
Publication status	Published - Nov 2005

Keywords

integrated optics
laser tuning
semiconductor lasers
DESIGN

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10.1109/LPT.2005.856371

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title = "Low Tuning Current Semiconductor Coupled-Cavity Lasers Incorporating Bragg Reflectors",

abstract = "Edge-emitting coupled-cavity semiconductor lasers employing a deeply etched Bragg reflector at one facet have been realized. The sidemode suppression ratio (SMSR) and wavelength tuning were investigated as a function of low level current injection. A single-mode tuning range of 3 nm centered around 977 nm displaying an SMSR better than 20 dB was obtained for tuning currents in the milliampere range.",

keywords = "integrated optics, laser tuning, semiconductor lasers, DESIGN",

author = "DH Brown and MB Flynn and Liam O'Faolain and Krauss, {Thomas Fraser}",

year = "2005",

month = nov,

doi = "10.1109/LPT.2005.856371",

language = "English",

volume = "17",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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T1 - Low Tuning Current Semiconductor Coupled-Cavity Lasers Incorporating Bragg Reflectors

AU - Brown, DH

AU - Flynn, MB

AU - O'Faolain, Liam

AU - Krauss, Thomas Fraser

PY - 2005/11

Y1 - 2005/11

N2 - Edge-emitting coupled-cavity semiconductor lasers employing a deeply etched Bragg reflector at one facet have been realized. The sidemode suppression ratio (SMSR) and wavelength tuning were investigated as a function of low level current injection. A single-mode tuning range of 3 nm centered around 977 nm displaying an SMSR better than 20 dB was obtained for tuning currents in the milliampere range.

AB - Edge-emitting coupled-cavity semiconductor lasers employing a deeply etched Bragg reflector at one facet have been realized. The sidemode suppression ratio (SMSR) and wavelength tuning were investigated as a function of low level current injection. A single-mode tuning range of 3 nm centered around 977 nm displaying an SMSR better than 20 dB was obtained for tuning currents in the milliampere range.

KW - integrated optics

KW - laser tuning

KW - semiconductor lasers

KW - DESIGN

U2 - 10.1109/LPT.2005.856371

DO - 10.1109/LPT.2005.856371

M3 - Article

SN - 1041-1135

VL - 17

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Low Tuning Current Semiconductor Coupled-Cavity Lasers Incorporating Bragg Reflectors

Abstract

Keywords

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