Low threshold, high gain AlGaInAs quantum dot lasers

T. W. Schlereth; C. Schneider; W. Kaiser; Sven Höfling; A. Forchel

doi:10.1063/1.2745200

Low threshold, high gain AlGaInAs quantum dot lasers

T. W. Schlereth^*, C. Schneider, W. Kaiser, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (similar to 920 nm). It is found that Al0.15Ga0.23In0.62As QD lasers show an similar to 2.1 times higher material gain and lower threshold current densities than Ga0.57In0.43As lasers (a factor of similar to 1.4 for 1.0 mm long and 100 mu m wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174 K between 15 and 85 degrees C. (C) 2007 American Institute of Physics.

Original language	English
Article number	221113
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	22
DOIs	https://doi.org/10.1063/1.2745200
Publication status	Published - 28 May 2007

Keywords

ACTIVE-REGION
TEMPERATURE

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10.1063/1.2745200

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title = "Low threshold, high gain AlGaInAs quantum dot lasers",

abstract = "The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (similar to 920 nm). It is found that Al0.15Ga0.23In0.62As QD lasers show an similar to 2.1 times higher material gain and lower threshold current densities than Ga0.57In0.43As lasers (a factor of similar to 1.4 for 1.0 mm long and 100 mu m wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174 K between 15 and 85 degrees C. (C) 2007 American Institute of Physics.",

keywords = "ACTIVE-REGION, TEMPERATURE",

author = "Schlereth, {T. W.} and C. Schneider and W. Kaiser and Sven H{\"o}fling and A. Forchel",

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doi = "10.1063/1.2745200",

language = "English",

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T1 - Low threshold, high gain AlGaInAs quantum dot lasers

AU - Schlereth, T. W.

AU - Schneider, C.

AU - Kaiser, W.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2007/5/28

Y1 - 2007/5/28

N2 - The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (similar to 920 nm). It is found that Al0.15Ga0.23In0.62As QD lasers show an similar to 2.1 times higher material gain and lower threshold current densities than Ga0.57In0.43As lasers (a factor of similar to 1.4 for 1.0 mm long and 100 mu m wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174 K between 15 and 85 degrees C. (C) 2007 American Institute of Physics.

AB - The properties of AlGaInAs quantum dot (QD) lasers are reported and compared to GaInAs QD lasers emitting at a similar wavelength (similar to 920 nm). It is found that Al0.15Ga0.23In0.62As QD lasers show an similar to 2.1 times higher material gain and lower threshold current densities than Ga0.57In0.43As lasers (a factor of similar to 1.4 for 1.0 mm long and 100 mu m wide devices). Both laser samples display comparable high internal quantum efficiencies of 0.79 (AlGaInAs) and 0.83 (GaInAs). The AlGaInAs devices exhibit a high characteristic temperature of 174 K between 15 and 85 degrees C. (C) 2007 American Institute of Physics.

KW - ACTIVE-REGION

KW - TEMPERATURE

U2 - 10.1063/1.2745200

DO - 10.1063/1.2745200

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221113

ER -

Low threshold, high gain AlGaInAs quantum dot lasers

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Keywords

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