Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

L Vitali*, M Burghard, P Wahl, MA Schneider, K Kern

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nanometers. The local electronic modifications are correlated with the observed changes in the radial breathing and G band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.

Original languageEnglish
Article number086804
Number of pages4
JournalPhysical Review Letters
Volume96
Issue number8
DOIs
Publication statusPublished - 3 Mar 2006

Keywords

  • RAMAN-SPECTROSCOPY
  • TRANSISTORS
  • INTERFACES

Fingerprint

Dive into the research topics of 'Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction'. Together they form a unique fingerprint.

Cite this