Lithographic alignment to site-controlled quantum dots for device integration

C. Schneider; M. Strauss; T. Suenner; A. Huggenberger; D. Wiener; S. Reitzenstein; M. Kamp; Sven Höfling; A. Forchel

doi:10.1063/1.2920189

Lithographic alignment to site-controlled quantum dots for device integration

C. Schneider, M. Strauss, T. Suenner, A. Huggenberger, D. Wiener, S. Reitzenstein, M. Kamp, Sven Höfling, A. Forchel

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

We report on a scalable fabrication technology for devices based on single quantum dots (QDs) which combines site-controlled growth of QDs with an accurate alignment procedure. Placement of individual QDs and corresponding device structures with a standard deviation of around 50 nm from the target position was achieved. The potential of the technology is demonstrated by fabricating arrays of mesas, each containing one QD at a defined position. The presence of single, optically active QDs in the mesas was probed by scanning microphotoluminescence of the mesa arrays. (C) 2008 American Institute of Physics.

Original language	English
Article number	183101
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	18
DOIs	https://doi.org/10.1063/1.2920189
Publication status	Published - 5 May 2008

Keywords

SYSTEM
MICROCAVITY
NANOCAVITY
INAS

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10.1063/1.2920189

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title = "Lithographic alignment to site-controlled quantum dots for device integration",

abstract = "We report on a scalable fabrication technology for devices based on single quantum dots (QDs) which combines site-controlled growth of QDs with an accurate alignment procedure. Placement of individual QDs and corresponding device structures with a standard deviation of around 50 nm from the target position was achieved. The potential of the technology is demonstrated by fabricating arrays of mesas, each containing one QD at a defined position. The presence of single, optically active QDs in the mesas was probed by scanning microphotoluminescence of the mesa arrays. (C) 2008 American Institute of Physics.",

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T1 - Lithographic alignment to site-controlled quantum dots for device integration

AU - Schneider, C.

AU - Strauss, M.

AU - Suenner, T.

AU - Huggenberger, A.

AU - Wiener, D.

AU - Reitzenstein, S.

AU - Kamp, M.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2008/5/5

Y1 - 2008/5/5

N2 - We report on a scalable fabrication technology for devices based on single quantum dots (QDs) which combines site-controlled growth of QDs with an accurate alignment procedure. Placement of individual QDs and corresponding device structures with a standard deviation of around 50 nm from the target position was achieved. The potential of the technology is demonstrated by fabricating arrays of mesas, each containing one QD at a defined position. The presence of single, optically active QDs in the mesas was probed by scanning microphotoluminescence of the mesa arrays. (C) 2008 American Institute of Physics.

AB - We report on a scalable fabrication technology for devices based on single quantum dots (QDs) which combines site-controlled growth of QDs with an accurate alignment procedure. Placement of individual QDs and corresponding device structures with a standard deviation of around 50 nm from the target position was achieved. The potential of the technology is demonstrated by fabricating arrays of mesas, each containing one QD at a defined position. The presence of single, optically active QDs in the mesas was probed by scanning microphotoluminescence of the mesa arrays. (C) 2008 American Institute of Physics.

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U2 - 10.1063/1.2920189

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183101

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Lithographic alignment to site-controlled quantum dots for device integration

Abstract

Keywords

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