Lineshape theory of photoluminescence from semiconductor alloys

Marius Grundmann*, Christof P. Dietrich

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. We present a model to explain the so-called "S-shape" temperature dependence of peak position, taking into account recombination of free excitons and excitons bound to impurities. We find the following effects to contribute with increasing temperature: exciton localization on impurities at low temperatures, exciton transfer between impurities, exciton ionization from impurities, transfer of excitons between potential minima in the disorder potential, and shrinkage of band gap. We extend the common theory of ionization of excitons from impurities to take into account impurity ionization. We find this effect essential for our lineshape theory. The lineshape theory describes quantitatively the temperature dependent peak position in Mg(x)Zn(1-x)O alloys.

Original languageEnglish
Article number123521
Number of pages10
JournalJournal of Applied Physics
Volume106
Issue number12
DOIs
Publication statusPublished - 15 Dec 2009

Keywords

  • doping profiles
  • energy gap
  • excitons
  • II-VI semiconductors
  • impurities
  • ionisation
  • magnesium compounds
  • photoluminescence
  • semiconductor doping
  • semiconductor growth
  • semiconductor thin films
  • wide band gap semiconductors
  • zinc compounds
  • INFRARED DIELECTRIC FUNCTIONS
  • ZNO THIN-FILMS
  • TEMPERATURE-DEPENDENCE
  • OPTICAL-PROPERTIES
  • BAND-GAP
  • EPITAXIAL LAYERS
  • EXCITON SPECTRA
  • MIXED-CRYSTALS
  • QUANTUM-WELLS
  • BOUND EXCITON

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