Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Shojan P. Pavunny; James F. Scott; Ram S. Katiyar

doi:10.3390/ma7042669

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Shojan P. Pavunny^*, James F. Scott, Ram S. Katiyar

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

Abstract

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of similar to 22 and a large energy bandgap of similar to 5.6 eV, resulting in sufficient electron and hole band offsets of similar to 2.57 eV and similar to 1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

Original language	English
Pages (from-to)	2669-2696
Number of pages	28
Journal	Materials
Volume	7
Issue number	4
DOIs	https://doi.org/10.3390/ma7042669
Publication status	Published - Apr 2014

Keywords

LaGdO3
gate oxide
high-k dielectrics
amorphous
optical
metal-oxide-semiconductor
metal-insulator-metal
equivalent oxide thickness
INSULATOR-METAL CAPACITORS
BAND OFFSETS
THIN-FILMS
SEMICONDUCTOR SYSTEMS
DIELECTRIC-CONSTANT
GATE DIELECTRICS
LAGDO3
SPECTROSCOPY
MOSFETS
STATES

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@article{1c918f78651a4fe390dbdc8852556623,

title = "Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices",

abstract = "A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of similar to 22 and a large energy bandgap of similar to 5.6 eV, resulting in sufficient electron and hole band offsets of similar to 2.57 eV and similar to 1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.",

keywords = "LaGdO3, gate oxide, high-k dielectrics, amorphous, optical, metal-oxide-semiconductor, metal-insulator-metal, equivalent oxide thickness, INSULATOR-METAL CAPACITORS, BAND OFFSETS, THIN-FILMS, SEMICONDUCTOR SYSTEMS, DIELECTRIC-CONSTANT, GATE DIELECTRICS, LAGDO3, SPECTROSCOPY, MOSFETS, STATES",

author = "Pavunny, {Shojan P.} and Scott, {James F.} and Katiyar, {Ram S.}",

year = "2014",

month = apr,

doi = "10.3390/ma7042669",

language = "English",

volume = "7",

pages = "2669--2696",

journal = "Materials",

issn = "1996-1944",

publisher = "MDPI AG",

number = "4",

}

TY - JOUR

T1 - Lanthanum Gadolinium Oxide

T2 - A New Electronic Device Material for CMOS Logic and Memory Devices

AU - Pavunny, Shojan P.

AU - Scott, James F.

AU - Katiyar, Ram S.

PY - 2014/4

Y1 - 2014/4

N2 - A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of similar to 22 and a large energy bandgap of similar to 5.6 eV, resulting in sufficient electron and hole band offsets of similar to 2.57 eV and similar to 1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

AB - A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of similar to 22 and a large energy bandgap of similar to 5.6 eV, resulting in sufficient electron and hole band offsets of similar to 2.57 eV and similar to 1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

KW - LaGdO3

KW - gate oxide

KW - high-k dielectrics

KW - amorphous

KW - optical

KW - metal-oxide-semiconductor

KW - metal-insulator-metal

KW - equivalent oxide thickness

KW - INSULATOR-METAL CAPACITORS

KW - BAND OFFSETS

KW - THIN-FILMS

KW - SEMICONDUCTOR SYSTEMS

KW - DIELECTRIC-CONSTANT

KW - GATE DIELECTRICS

KW - LAGDO3

KW - SPECTROSCOPY

KW - MOSFETS

KW - STATES

U2 - 10.3390/ma7042669

DO - 10.3390/ma7042669

M3 - Review article

SN - 1996-1944

VL - 7

SP - 2669

EP - 2696

JO - Materials

JF - Materials

IS - 4

ER -

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Abstract

Keywords

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