Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Shojan P. Pavunny*, James F. Scott, Ram S. Katiyar

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

17 Citations (Scopus)

Abstract

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of similar to 22 and a large energy bandgap of similar to 5.6 eV, resulting in sufficient electron and hole band offsets of similar to 2.57 eV and similar to 1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

Original languageEnglish
Pages (from-to)2669-2696
Number of pages28
JournalMaterials
Volume7
Issue number4
DOIs
Publication statusPublished - Apr 2014

Keywords

  • LaGdO3
  • gate oxide
  • high-k dielectrics
  • amorphous
  • optical
  • metal-oxide-semiconductor
  • metal-insulator-metal
  • equivalent oxide thickness
  • INSULATOR-METAL CAPACITORS
  • BAND OFFSETS
  • THIN-FILMS
  • SEMICONDUCTOR SYSTEMS
  • DIELECTRIC-CONSTANT
  • GATE DIELECTRICS
  • LAGDO3
  • SPECTROSCOPY
  • MOSFETS
  • STATES

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