Kerr-induced passive Q switching of a monolithic semiconductor diode laser

MB Flynn, Liam O'Faolain, Thomas Fraser Krauss

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present a novel (to our knowledge) method to passively Q switch monolithic semiconductor diode lasers using a Bragg reflector filled with a polymer exhibiting the Kerr effect. We present numerical modeling of such devices that display Q switching. We numerically characterize the pulsed laser output in terms of repetition frequency, pulse power, and pulse energy. We also examine the influence of spontaneous emission strength on pulse dynamics. Advantages of this technique include higher repetition rates and very short pulses.(c) 2005 Optical Society of America.

Original languageEnglish
Pages (from-to)792-795
Number of pages4
JournalJournal of the Optical Society of America B : Optical Physics
Volume22
Publication statusPublished - Apr 2005

Fingerprint

Dive into the research topics of 'Kerr-induced passive Q switching of a monolithic semiconductor diode laser'. Together they form a unique fingerprint.

Cite this