Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition

Y. Gagou; J. Belhadi; B. Asbani; M. El Marssi; J-L Dellis; Yu. I. Yuzyuk; I. P. Raevski; J. F Scott

doi:10.1016/j.matdes.2017.03.001

Intrinsic dead layer effects in relaxed epitaxial BaTiO₃ thin film grown by pulsed laser deposition

Y. Gagou, J. Belhadi, B. Asbani, M. El Marssi, J-L Dellis, Yu. I. Yuzyuk, I. P. Raevski, J. F Scott

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial BaTiO₃ (BT) thin film of about 400 nm thickness was grown on LaSr_0.5Co_0.5O₃ (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with P_s = 32 μC/cm², P_r = 14 μC/cm² and E_C = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field E_C = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at T_C ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between T_C and the extrapolated Curie-Weiss temperature T₀ is attributed to the dead-layer effects.

Original language	English
Pages (from-to)	157-163
Journal	Materials & Design
Volume	122
Early online date	2 Mar 2017
DOIs	https://doi.org/10.1016/j.matdes.2017.03.001
Publication status	Published - 15 May 2017

Keywords

Dead layer
Ferroelectric
BaTiO3
Epitaxial growth
Pulsed laser deposition

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10.1016/j.matdes.2017.03.001

Scott_2017_M&D_DeadLayerEffects_AAM
© 2017 Elsevier Ltd. All rights reserved. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1016/j.matdes.2017.03.001
Accepted author manuscript, 1.99 MBLicence: CC BY-NC-ND

Cite this

@article{0a50f1574ce84da18abd76c2376ae229,

title = "Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition",

abstract = "Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.",

keywords = "Dead layer, Ferroelectric, BaTiO3, Epitaxial growth, Pulsed laser deposition",

author = "Y. Gagou and J. Belhadi and B. Asbani and {El Marssi}, M. and J-L Dellis and Yuzyuk, {Yu. I.} and Raevski, {I. P.} and Scott, {J. F}",

note = "MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP).",

year = "2017",

month = may,

day = "15",

doi = "10.1016/j.matdes.2017.03.001",

language = "English",

volume = "122",

pages = "157--163",

journal = "Materials & Design",

issn = "0264-1275",

publisher = "Elsevier",

}

TY - JOUR

T1 - Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition

AU - Gagou, Y.

AU - Belhadi, J.

AU - Asbani, B.

AU - El Marssi, M.

AU - Dellis, J-L

AU - Yuzyuk, Yu. I.

AU - Raevski, I. P.

AU - Scott, J. F

N1 - MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP).

PY - 2017/5/15

Y1 - 2017/5/15

N2 - Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.

AB - Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.

KW - Dead layer

KW - Ferroelectric

KW - BaTiO3

KW - Epitaxial growth

KW - Pulsed laser deposition

U2 - 10.1016/j.matdes.2017.03.001

DO - 10.1016/j.matdes.2017.03.001

M3 - Article

SN - 0264-1275

VL - 122

SP - 157

EP - 163

JO - Materials & Design

JF - Materials & Design

ER -