Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers

Marcin Motyka, Grzegorz SęK, Krzysztof Ryczko, Mateusz Dyksik, Robert Weih, Gilles Patriarche, Jan Misiewicz, Martin Kamp, Sven Höfling

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665 In0.335 AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.
Original languageEnglish
Number of pages7
JournalNanoscale research letters
Volume10
Issue number471
DOIs
Publication statusPublished - 7 Dec 2015

Keywords

  • Type II GaIn(As)Sb/GaSb
  • QW interface profile
  • Intermixing
  • Interband cascade lasers
  • FTIR spectroscopy
  • EDX spectra

Fingerprint

Dive into the research topics of 'Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers'. Together they form a unique fingerprint.

Cite this