Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers

Marcin Motyka; Grzegorz SęK; Krzysztof Ryczko; Mateusz Dyksik; Robert Weih; Gilles Patriarche; Jan Misiewicz; Martin Kamp; Sven Höfling

doi:10.1186/s11671-015-1183-x

Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers

Marcin Motyka, Grzegorz SęK, Krzysztof Ryczko, Mateusz Dyksik, Robert Weih, Gilles Patriarche, Jan Misiewicz, Martin Kamp, Sven Höfling

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Abstract

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga_0.665In_0.335 As_xSb_1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

Original language	English
Number of pages	7
Journal	Nanoscale research letters
Volume	10
Issue number	471
DOIs	https://doi.org/10.1186/s11671-015-1183-x
Publication status	Published - 7 Dec 2015

Keywords

Type II GaIn(As)Sb/GaSb
QW interface profile
Intermixing
Interband cascade lasers
FTIR spectroscopy
EDX spectra

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Hoefling_2015_NRL_intermixing
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@article{50e45cdafb2c46d082fb37bf6c6849c0,

title = "Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers",

abstract = "The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665 In0.335 AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend. ",

keywords = "Type II GaIn(As)Sb/GaSb, QW interface profile, Intermixing, Interband cascade lasers, FTIR spectroscopy, EDX spectra",

author = "Marcin Motyka and Grzegorz S{\c e}K and Krzysztof Ryczko and Mateusz Dyksik and Robert Weih and Gilles Patriarche and Jan Misiewicz and Martin Kamp and Sven H{\"o}fling",

note = "The work has been supported by Project Widelase (no. 318798) of the Seventh Framework Programme of the European Commission. ",

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doi = "10.1186/s11671-015-1183-x",

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TY - JOUR

T1 - Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers

AU - Motyka, Marcin

AU - SęK, Grzegorz

AU - Ryczko, Krzysztof

AU - Dyksik, Mateusz

AU - Weih, Robert

AU - Patriarche, Gilles

AU - Misiewicz, Jan

AU - Kamp, Martin

AU - Höfling, Sven

N1 - The work has been supported by Project Widelase (no. 318798) of the Seventh Framework Programme of the European Commission.

PY - 2015/12/7

Y1 - 2015/12/7

N2 - The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665 In0.335 AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

AB - The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665 In0.335 AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

KW - Type II GaIn(As)Sb/GaSb

KW - QW interface profile

KW - Intermixing

KW - Interband cascade lasers

KW - FTIR spectroscopy

KW - EDX spectra

U2 - 10.1186/s11671-015-1183-x

DO - 10.1186/s11671-015-1183-x

M3 - Article

SN - 1931-7573

VL - 10

JO - Nanoscale research letters

JF - Nanoscale research letters

IS - 471

ER -

Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers

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