InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

P. D. C. King; T. D. Veal; C. E. Kendrick; L. R. Bailey; S. M. Durbin; C. F. McConville

doi:10.1103/PhysRevB.78.033308

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

P. D. C. King, T. D. Veal, C. E. Kendrick, L. R. Bailey, S. M. Durbin, C. F. McConville

Research output: Contribution to journal › Article › peer-review

127 Citations (Scopus)

Abstract

High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

Original language	English
Pages (from-to)	033308
Number of pages	4
Journal	Physical Review. B, Condensed matter and materials physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.78.033308
Publication status	Published - Jul 2008

Keywords

SEMICONDUCTOR INTERFACES
INN
GAN
HETEROJUNCTIONS
NITRIDE
BARRIER
HYDROGEN
DEVICES
ALN

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10.1103/PhysRevB.78.033308

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title = "InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements",

abstract = "High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.",

keywords = "SEMICONDUCTOR INTERFACES, INN, GAN, HETEROJUNCTIONS, NITRIDE, BARRIER, HYDROGEN, DEVICES, ALN",

author = "King, {P. D. C.} and Veal, {T. D.} and Kendrick, {C. E.} and Bailey, {L. R.} and Durbin, {S. M.} and McConville, {C. F.}",

year = "2008",

month = jul,

doi = "10.1103/PhysRevB.78.033308",

language = "English",

volume = "78",

pages = "033308",

journal = "Physical Review. B, Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

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TY - JOUR

T1 - InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

AU - King, P. D. C.

AU - Veal, T. D.

AU - Kendrick, C. E.

AU - Bailey, L. R.

AU - Durbin, S. M.

AU - McConville, C. F.

PY - 2008/7

Y1 - 2008/7

N2 - High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

AB - High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

KW - SEMICONDUCTOR INTERFACES

KW - INN

KW - GAN

KW - HETEROJUNCTIONS

KW - NITRIDE

KW - BARRIER

KW - HYDROGEN

KW - DEVICES

KW - ALN

U2 - 10.1103/PhysRevB.78.033308

DO - 10.1103/PhysRevB.78.033308

M3 - Article

SN - 1098-0121

VL - 78

SP - 033308

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 3

ER -

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

Abstract

Keywords

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