InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

P. D. C. King, T. D. Veal, C. E. Kendrick, L. R. Bailey, S. M. Durbin, C. F. McConville

Research output: Contribution to journalArticlepeer-review

118 Citations (Scopus)

Abstract

High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

Original languageEnglish
Pages (from-to)033308
Number of pages4
JournalPhysical Review. B, Condensed matter and materials physics
Volume78
Issue number3
DOIs
Publication statusPublished - Jul 2008

Keywords

  • SEMICONDUCTOR INTERFACES
  • INN
  • GAN
  • HETEROJUNCTIONS
  • NITRIDE
  • BARRIER
  • HYDROGEN
  • DEVICES
  • ALN

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