(In,Ga)As/GaP electrical injection quantum dot laser

M. Heidemann; S. Höfling; M. Kamp

doi:10.1063/1.4860982

(In,Ga)As/GaP electrical injection quantum dot laser

M. Heidemann^*, S. Höfling, M. Kamp

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm² at a heat-sink temperature of 80 K.

Original language	English
Article number	011113
Number of pages	4
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4860982
Publication status	Published - 6 Jan 2014

Keywords

Molecular-beam epitaxy
Compound semiconductors
Conduction-band
Silicon
Alloys
System
Diodes

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10.1063/1.4860982

Hoefling_2014_APL_ElectircalInjection_FinalPubVersion
© 2014 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4860982
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Cite this

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abstract = "The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K. ",

keywords = "Molecular-beam epitaxy, Compound semiconductors, Conduction-band, Silicon, Alloys, System, Diodes",

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AU - Heidemann, M.

AU - Höfling, S.

AU - Kamp, M.

PY - 2014/1/6

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N2 - The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.

AB - The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.

KW - Molecular-beam epitaxy

KW - Compound semiconductors

KW - Conduction-band

KW - Silicon

KW - Alloys

KW - System

KW - Diodes

UR - https://www.scopus.com/pages/publications/84892156166

U2 - 10.1063/1.4860982

DO - 10.1063/1.4860982

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

(In,Ga)As/GaP electrical injection quantum dot laser

Abstract

Keywords

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