(In,Ga)As/GaP electrical injection quantum dot laser

M. Heidemann*, S. Höfling, M. Kamp

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)
1 Downloads (Pure)

Abstract

The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.
Original languageEnglish
Article number011113
Number of pages4
JournalApplied Physics Letters
Volume104
Issue number1
DOIs
Publication statusPublished - 6 Jan 2014

Keywords

  • Molecular-beam epitaxy
  • Compound semiconductors
  • Conduction-band
  • Silicon
  • Alloys
  • System
  • Diodes

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