Abstract
We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin-diffusion profile. A further means of manipulation is the application of a weak transverse magnetic field, which strongly increases the spin flow out of the excitation spot. These effects are directly monitored in spin-imaging experiments and spatially resolved Hanle measurements.
Original language | English |
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Article number | 245207 |
Number of pages | 5 |
Journal | Physical Review. B, Condensed matter and materials physics |
Volume | 79 |
Issue number | 24 |
DOIs | |
Publication status | Published - Jun 2009 |
Keywords
- gallium arsenide
- III-V semiconductors
- magneto-optical effects
- spin dynamics
- spin polarised transport
- INJECTION
- SEMICONDUCTORS