Influence of light on spin diffusion in weak magnetic fields

J. -H. Quast*, G. V. Astakhov, W. Ossau, L. W. Molenkamp, J. Heinrich, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We demonstrate that optical illumination strongly influences spin transport in n-type GaAs. Specifically, increasing the power density of optical spin pumping results in a significant expansion of the spin-diffusion profile. A further means of manipulation is the application of a weak transverse magnetic field, which strongly increases the spin flow out of the excitation spot. These effects are directly monitored in spin-imaging experiments and spatially resolved Hanle measurements.

Original languageEnglish
Article number245207
Number of pages5
JournalPhysical Review. B, Condensed matter and materials physics
Volume79
Issue number24
DOIs
Publication statusPublished - Jun 2009

Keywords

  • gallium arsenide
  • III-V semiconductors
  • magneto-optical effects
  • spin dynamics
  • spin polarised transport
  • INJECTION
  • SEMICONDUCTORS

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