Influence of GaSb and AlGaInAsSb as Barrier Material on similar to 2.8-mu m GaSb-Based Diode Laser Properties

T. Lehnhardt*, A. Herrmann, M. Kamp, Sven Höfling, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

GaSb-based diode lasers emitting at a wavelength of 2.8 mu m have been grown. The devices feature GaSb or Al(0.21)Ga(0.58)In(0.21)As(0.20)Sb(0.80) barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the laser light, the optical properties and the impact on device performance have been determined. The refractive index for Al(0.21)Ga(0.58)In(0.21)As(0.20)Sb(0.80) has been estimated to be 3.26.

Original languageEnglish
Pages (from-to)371-373
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number6
DOIs
Publication statusPublished - 15 Mar 2011

Keywords

  • AlGaInAsSb
  • antimonide-based lasers
  • gas sensing
  • midinfrared lasers
  • quantum-well (QW) lasers
  • quinternary barrier
  • refractive index
  • semiconductor lasers
  • DISTRIBUTED-FEEDBACK LASERS
  • MU-M

Fingerprint

Dive into the research topics of 'Influence of GaSb and AlGaInAsSb as Barrier Material on similar to 2.8-mu m GaSb-Based Diode Laser Properties'. Together they form a unique fingerprint.

Cite this