Abstract
A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrodinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4-6.5)x10(11) cm(-2) have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found. (c) 2006 American Institute of Physics.
Original language | English |
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Article number | 103106 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 99 |
Issue number | 10 |
DOIs | |
Publication status | Published - 15 May 2006 |
Keywords
- CONTINUOUS-WAVE OPERATION
- THRESHOLD CURRENT-DENSITY
- ROOM-TEMPERATURE OPERATION
- MU-M
- SEMICONDUCTOR-LASER
- LASING PROPERTIES
- SUPERLATTICE
- GENERATION
- DESIGN
- PERFORMANCE