Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m

Dirk Bisping; Damian Pucicki; Marc Fischer; Sven Höfling; Alfred Forchel

doi:10.1016/j.jcrysgro.2008.09.206

Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m

Dirk Bisping^*, Damian Pucicki, Marc Fischer, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-mu m-emitting GaInNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GaInNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm(2). (C) 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1715-1718
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	7
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.206
Publication status	Published - 15 Mar 2009

Keywords

Defects
Molecular beam epitaxy
Dilute nitrides
Semiconducting III-V materials
Laser diodes
CONTINUOUS-WAVE OPERATION
DIODES
TEMPERATURE
1.55-MU-M
GROWTH
NM

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10.1016/j.jcrysgro.2008.09.206

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@article{01bdac69f6664724a6dbe3490e6da69a,

title = "Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m",

abstract = "The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-mu m-emitting GaInNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GaInNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm(2). (C) 2008 Elsevier B.V. All rights reserved.",

keywords = "Defects, Molecular beam epitaxy, Dilute nitrides, Semiconducting III-V materials, Laser diodes, CONTINUOUS-WAVE OPERATION, DIODES, TEMPERATURE, 1.55-MU-M, GROWTH, NM",

author = "Dirk Bisping and Damian Pucicki and Marc Fischer and Sven H{\"o}fling and Alfred Forchel",

year = "2009",

month = mar,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.206",

language = "English",

volume = "311",

pages = "1715--1718",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "7",

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TY - JOUR

T1 - Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m

AU - Bisping, Dirk

AU - Pucicki, Damian

AU - Fischer, Marc

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2009/3/15

Y1 - 2009/3/15

N2 - The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-mu m-emitting GaInNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GaInNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm(2). (C) 2008 Elsevier B.V. All rights reserved.

AB - The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-mu m-emitting GaInNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GaInNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm(2). (C) 2008 Elsevier B.V. All rights reserved.

KW - Defects

KW - Molecular beam epitaxy

KW - Dilute nitrides

KW - Semiconducting III-V materials

KW - Laser diodes

KW - CONTINUOUS-WAVE OPERATION

KW - DIODES

KW - TEMPERATURE

KW - 1.55-MU-M

KW - GROWTH

KW - NM

U2 - 10.1016/j.jcrysgro.2008.09.206

DO - 10.1016/j.jcrysgro.2008.09.206

M3 - Article

SN - 0022-0248

VL - 311

SP - 1715

EP - 1718

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 7

ER -

Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m

Abstract

Keywords

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