Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6 mu m

Dirk Bisping*, Damian Pucicki, Marc Fischer, Sven Höfling, Alfred Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The influence of the arsenic flux during molecular beam epitaxy growth of 1.5-1.6-mu m-emitting GaInNAs quantum wells on the annealing properties is studied. Reducing the arsenic flux results in an increase of the time needed for optimum annealing and offers an easy possibility for tailoring the annealing behavior of GaInNAs layers. Investigation of the annealing behavior of complete laser structures shows that over-annealing can already occur after the growth of complete laser structures due to the high substrate temperature during growth of cladding layers. Applying these observations to the growth of laser structures results in laser diodes covering the wavelength range from 1460 to 1610 nm with threshold current densities in the range 1.3-3.3 kA/cm(2). (C) 2008 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)1715-1718
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 15 Mar 2009

Keywords

  • Defects
  • Molecular beam epitaxy
  • Dilute nitrides
  • Semiconducting III-V materials
  • Laser diodes
  • CONTINUOUS-WAVE OPERATION
  • DIODES
  • TEMPERATURE
  • 1.55-MU-M
  • GROWTH
  • NM

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