Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

F. Janiak; G. Sek; M. Motyka; K. Ryczko; J. Misiewicz; A. Bauer; Sven Höfling; M. Kamp; A. Forchel

doi:10.1063/1.4726423

Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

F. Janiak^*, G. Sek, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, Sven Höfling, M. Kamp, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k center dot p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726423]

Original language	English
Article number	231908
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726423
Publication status	Published - 4 Jun 2012

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title = "Increasing the optical transition oscillator strength in GaSb-based type II quantum wells",

abstract = "The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k center dot p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726423]",

author = "F. Janiak and G. Sek and M. Motyka and K. Ryczko and J. Misiewicz and A. Bauer and Sven H{\"o}fling and M. Kamp and A. Forchel",

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T1 - Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

AU - Janiak, F.

AU - Sek, G.

AU - Motyka, M.

AU - Ryczko, K.

AU - Misiewicz, J.

AU - Bauer, A.

AU - Höfling, Sven

AU - Kamp, M.

AU - Forchel, A.

PY - 2012/6/4

Y1 - 2012/6/4

N2 - The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k center dot p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726423]

AB - The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k center dot p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726423]

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DO - 10.1063/1.4726423

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231908

ER -

Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

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