Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

F. Janiak*, G. Sek, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, Sven Höfling, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures as one of the crucial parameters for the performance of interband cascade lasers was investigated. Modulation spectroscopy, supported by eight-band k center dot p calculations, has been employed as a sensitive probing technique allowing to determine the transition intensities of samples with various layer structures. The results show that altering the composition of the valence band well in a type II system can efficiently enhance the transition oscillator strength. Especially, the utilization of a quaternary GaInAsSb material for hole confinement turned out to be highly beneficial. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726423]

Original languageEnglish
Article number231908
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number23
DOIs
Publication statusPublished - 4 Jun 2012

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