InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm

M. Strauss*, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We demonstrate an optimized molecular beam epitaxial growth procedure of InAs quantum dots (QDs) capped by a low nitrogen content GaInAs(N) quantum well to obtain single QD emission at telecommunication wavelengths. Technical separation of the nitrogen radio frequency plasma source to a second chamber does allow formation of InAs QDs without nitrogen incorporation. Thereby, optical quality degradation is avoided and by additional careful separation of the GaInAsN cap from the InAs QD layer with a partial GaInAs cap of nominal 4 nm thickness we achieve comparatively bright single dot emission above 1300 nm at 8 K. Micro-photoluminescence spectroscopy on single QDs reveal excitonic and biexcitonic emission at 939.8 meV (similar to 1.319 mu m) and 934.6 meV (similar to 1.327 mu m), respectively. Hence, InAs/GaAs(N) QDs can be considered as to be a promising system for use as single photon sources emitting in the 1.3 mu m telecommunication band, with prospects for an extension to even longer wavelengths.

Original languageEnglish
Article number505601
Number of pages5
JournalNanotechnology
Volume20
Issue number50
DOIs
Publication statusPublished - 16 Dec 2009

Keywords

  • MU-M
  • TURNSTILE
  • DEVICE

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