In-well ambipolar diffusion in room temperature InGaAsP multiple quantum wells

D Marshall; Alan Miller; CC Button

doi:10.1109/3.863952

In-well ambipolar diffusion in room temperature InGaAsP multiple quantum wells

D Marshall, Alan Miller, CC Button

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.

Original language	English
Pages (from-to)	1013-1015
Number of pages	3
Journal	IEEE Journal of Quantum Electronics
Volume	36
Issue number	9
DOIs	https://doi.org/10.1109/3.863952
Publication status	Published - Sept 2000

Keywords

diffusion processes
quantum wells
semiconductor materials measurement
FREE-CARRIER GRATINGS
SEMICONDUCTORS
RECOMBINATION
SUPERLATTICES
DIFFRACTION
MOBILITY

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10.1109/3.863952

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abstract = "Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.",

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AU - Miller, Alan

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AB - Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 mu m on room-temperature InGaAsP multiple quantum wells using a PPLN optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm(2)/s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.

KW - diffusion processes

KW - quantum wells

KW - semiconductor materials measurement

KW - FREE-CARRIER GRATINGS

KW - SEMICONDUCTORS

KW - RECOMBINATION

KW - SUPERLATTICES

KW - DIFFRACTION

KW - MOBILITY

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -

In-well ambipolar diffusion in room temperature InGaAsP multiple quantum wells

Abstract

Keywords

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