Abstract
The surface structure of In-polarity c-plane InN has been investigated by low energy ion scattering spectroscopy. Comparison of ion scattering spectra recorded along the [10 0 0] azimuth with model calculations indicates that the clean In-polarity c-plane InN surface is terminated by In-adlayers with a laterally contracted topmost In layer. This is consistent with previous X-ray photoemission and electron diffraction results. Additionally, the surface properties of a-plane InN have been investigated using core-level and valence band X-ray photoemission spectroscopy (XPS). From the ratio of the In and N core-level XPS signal intensities, the clean a-plane InN surface has also been found to be terminated by In-adlayers. Photoemission measurements of the valence band maximum to surface Fermi level separation for a-plane InN indicate the existence of an electron accumulation layer at the surface. This observation of electron accumulation at non-polar InN surfaces in the presence of In-adlayers is in agreement with the predictions of previous first-principles calculations. (c) 2007 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 351-354 |
| Number of pages | 4 |
| Journal | Physica B : Condensed Matter |
| Volume | 401-402 |
| DOIs | |
| Publication status | Published - 15 Dec 2007 |
Keywords
- indium nitride
- surfaces
- photoemission
- ion scattering
- MOLECULAR-BEAM EPITAXY
- GAN
- GROWTH
- FILMS
- XPS
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