In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies

T. D. Veal, P. D. C. King, M. Walker, C. F. McConville, Hai Lu, W. J. Schaff

Research output: Contribution to journalArticlepeer-review

Abstract

The surface structure of In-polarity c-plane InN has been investigated by low energy ion scattering spectroscopy. Comparison of ion scattering spectra recorded along the [10 0 0] azimuth with model calculations indicates that the clean In-polarity c-plane InN surface is terminated by In-adlayers with a laterally contracted topmost In layer. This is consistent with previous X-ray photoemission and electron diffraction results. Additionally, the surface properties of a-plane InN have been investigated using core-level and valence band X-ray photoemission spectroscopy (XPS). From the ratio of the In and N core-level XPS signal intensities, the clean a-plane InN surface has also been found to be terminated by In-adlayers. Photoemission measurements of the valence band maximum to surface Fermi level separation for a-plane InN indicate the existence of an electron accumulation layer at the surface. This observation of electron accumulation at non-polar InN surfaces in the presence of In-adlayers is in agreement with the predictions of previous first-principles calculations. (c) 2007 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalPhysica B : Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 15 Dec 2007

Keywords

  • indium nitride
  • surfaces
  • photoemission
  • ion scattering
  • MOLECULAR-BEAM EPITAXY
  • GAN
  • GROWTH
  • FILMS
  • XPS

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