Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots

M. Syperek; M. Baranowski; G. Sek; J. Misiewicz; A. Loeffler; Sven Höfling; S. Reitzenstein; M. Kamp; A. Forchel

doi:10.1103/PhysRevB.87.125305

Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots

M. Syperek^*, M. Baranowski, G. Sek, J. Misiewicz, A. Loeffler, Sven Höfling, S. Reitzenstein, M. Kamp, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Carrier relaxation processes have been studied in low indium content self-assembled (In,Ga)As/GaAs quantum dots (QDs). Temperature-dependent photoluminescence of the wetting layer (WL) and QDs, and QD photoluminescence rise time elongation from similar to 100 to similar to 200 ps in the range of 10-45 K, indicated a complex carrier relaxation scheme. It involves localization of carriers/excitons in the WL, their temperature-mediated release, and subsequent transfer between the states of the WL and QD ensemble. These observations are explained by a thermal hopping model, in which electron-hole pairs are redistributed within two separate sets of zero-dimensional states of considerably different densities connected by a two-dimensional mobility channel. DOI: 10.1103/PhysRevB.87.125305

Original language	English
Article number	125305
Number of pages	7
Journal	Physical Review. B, Condensed matter and materials physics
Volume	87
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.87.125305
Publication status	Published - 11 Mar 2013

Keywords

TEMPERATURE-DEPENDENCE
ELECTRON RELAXATION
OPTICAL-PROPERTIES
ENERGY-TRANSFER
PHOTOLUMINESCENCE
CAPTURE
SOLIDS
GAAS
TIME
TRANSITION

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10.1103/PhysRevB.87.125305

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Syperek, M., Baranowski, M., Sek, G., Misiewicz, J., Loeffler, A., Höfling, S., Reitzenstein, S., Kamp, M., & Forchel, A. (2013). Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots. Physical Review. B, Condensed matter and materials physics, 87(12), Article 125305. https://doi.org/10.1103/PhysRevB.87.125305

@article{877b599a639640e882ef14350672531c,

title = "Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots",

abstract = "Carrier relaxation processes have been studied in low indium content self-assembled (In,Ga)As/GaAs quantum dots (QDs). Temperature-dependent photoluminescence of the wetting layer (WL) and QDs, and QD photoluminescence rise time elongation from similar to 100 to similar to 200 ps in the range of 10-45 K, indicated a complex carrier relaxation scheme. It involves localization of carriers/excitons in the WL, their temperature-mediated release, and subsequent transfer between the states of the WL and QD ensemble. These observations are explained by a thermal hopping model, in which electron-hole pairs are redistributed within two separate sets of zero-dimensional states of considerably different densities connected by a two-dimensional mobility channel. DOI: 10.1103/PhysRevB.87.125305",

keywords = "TEMPERATURE-DEPENDENCE, ELECTRON RELAXATION, OPTICAL-PROPERTIES, ENERGY-TRANSFER, PHOTOLUMINESCENCE, CAPTURE, SOLIDS, GAAS, TIME, TRANSITION",

author = "M. Syperek and M. Baranowski and G. Sek and J. Misiewicz and A. Loeffler and Sven H{\"o}fling and S. Reitzenstein and M. Kamp and A. Forchel",

year = "2013",

month = mar,

day = "11",

doi = "10.1103/PhysRevB.87.125305",

language = "English",

volume = "87",

journal = "Physical Review. B, Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

Syperek, M, Baranowski, M, Sek, G, Misiewicz, J, Loeffler, A, Höfling, S, Reitzenstein, S, Kamp, M & Forchel, A 2013, 'Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots', Physical Review. B, Condensed matter and materials physics, vol. 87, no. 12, 125305. https://doi.org/10.1103/PhysRevB.87.125305

TY - JOUR

T1 - Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots

AU - Syperek, M.

AU - Baranowski, M.

AU - Sek, G.

AU - Misiewicz, J.

AU - Loeffler, A.

AU - Höfling, Sven

AU - Reitzenstein, S.

AU - Kamp, M.

AU - Forchel, A.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Carrier relaxation processes have been studied in low indium content self-assembled (In,Ga)As/GaAs quantum dots (QDs). Temperature-dependent photoluminescence of the wetting layer (WL) and QDs, and QD photoluminescence rise time elongation from similar to 100 to similar to 200 ps in the range of 10-45 K, indicated a complex carrier relaxation scheme. It involves localization of carriers/excitons in the WL, their temperature-mediated release, and subsequent transfer between the states of the WL and QD ensemble. These observations are explained by a thermal hopping model, in which electron-hole pairs are redistributed within two separate sets of zero-dimensional states of considerably different densities connected by a two-dimensional mobility channel. DOI: 10.1103/PhysRevB.87.125305

AB - Carrier relaxation processes have been studied in low indium content self-assembled (In,Ga)As/GaAs quantum dots (QDs). Temperature-dependent photoluminescence of the wetting layer (WL) and QDs, and QD photoluminescence rise time elongation from similar to 100 to similar to 200 ps in the range of 10-45 K, indicated a complex carrier relaxation scheme. It involves localization of carriers/excitons in the WL, their temperature-mediated release, and subsequent transfer between the states of the WL and QD ensemble. These observations are explained by a thermal hopping model, in which electron-hole pairs are redistributed within two separate sets of zero-dimensional states of considerably different densities connected by a two-dimensional mobility channel. DOI: 10.1103/PhysRevB.87.125305

KW - TEMPERATURE-DEPENDENCE

KW - ELECTRON RELAXATION

KW - OPTICAL-PROPERTIES

KW - ENERGY-TRANSFER

KW - PHOTOLUMINESCENCE

KW - CAPTURE

KW - SOLIDS

KW - GAAS

KW - TIME

KW - TRANSITION

U2 - 10.1103/PhysRevB.87.125305

DO - 10.1103/PhysRevB.87.125305

M3 - Article

SN - 1098-0121

VL - 87

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 12

M1 - 125305

ER -

Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots

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Keywords

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