Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m

Grzegorz Sek; Pawel Podemski; Janusz Andrzejewski; Jan Misiewicz; Sebastian Hein; Sven Höfling; Alfred Forchel

doi:10.1143/APEX.2.061102

Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m

Grzegorz Sek^*, Pawel Podemski, Janusz Andrzejewski, Jan Misiewicz, Sebastian Hein, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on polarization independent 1.55 mu m room temperature edge emission from an InGaAs immersion layer, being a quasi-two-dimensional surrounding of columnar quantum dashes formed during the close stacking self assembled growth. Calculations performed in an 8 band k-p model revealed that the in-plane strain distribution across the immersion layer induces a significant heavy hole-light hole valence states mixing leading to equal transverse electric and transverse magnetic components of the optical transition intensity. (C) 2009 The Japan Society of Applied Physics

Original language	English
Article number	061102
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	6
DOIs	https://doi.org/10.1143/APEX.2.061102
Publication status	Published - Jun 2009

Keywords

SEMICONDUCTOR OPTICAL AMPLIFIERS
ELECTRONIC-STRUCTURE
TENSILE
DOTS
GAIN

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10.1143/APEX.2.061102

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@article{5a1320c825704116930fb60f29dc06b0,

title = "Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m",

abstract = "We report on polarization independent 1.55 mu m room temperature edge emission from an InGaAs immersion layer, being a quasi-two-dimensional surrounding of columnar quantum dashes formed during the close stacking self assembled growth. Calculations performed in an 8 band k-p model revealed that the in-plane strain distribution across the immersion layer induces a significant heavy hole-light hole valence states mixing leading to equal transverse electric and transverse magnetic components of the optical transition intensity. (C) 2009 The Japan Society of Applied Physics",

keywords = "SEMICONDUCTOR OPTICAL AMPLIFIERS, ELECTRONIC-STRUCTURE, TENSILE, DOTS, GAIN",

author = "Grzegorz Sek and Pawel Podemski and Janusz Andrzejewski and Jan Misiewicz and Sebastian Hein and Sven H{\"o}fling and Alfred Forchel",

year = "2009",

month = jun,

doi = "10.1143/APEX.2.061102",

language = "English",

volume = "2",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m

AU - Sek, Grzegorz

AU - Podemski, Pawel

AU - Andrzejewski, Janusz

AU - Misiewicz, Jan

AU - Hein, Sebastian

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2009/6

Y1 - 2009/6

N2 - We report on polarization independent 1.55 mu m room temperature edge emission from an InGaAs immersion layer, being a quasi-two-dimensional surrounding of columnar quantum dashes formed during the close stacking self assembled growth. Calculations performed in an 8 band k-p model revealed that the in-plane strain distribution across the immersion layer induces a significant heavy hole-light hole valence states mixing leading to equal transverse electric and transverse magnetic components of the optical transition intensity. (C) 2009 The Japan Society of Applied Physics

AB - We report on polarization independent 1.55 mu m room temperature edge emission from an InGaAs immersion layer, being a quasi-two-dimensional surrounding of columnar quantum dashes formed during the close stacking self assembled growth. Calculations performed in an 8 band k-p model revealed that the in-plane strain distribution across the immersion layer induces a significant heavy hole-light hole valence states mixing leading to equal transverse electric and transverse magnetic components of the optical transition intensity. (C) 2009 The Japan Society of Applied Physics

KW - SEMICONDUCTOR OPTICAL AMPLIFIERS

KW - ELECTRONIC-STRUCTURE

KW - TENSILE

KW - DOTS

KW - GAIN

U2 - 10.1143/APEX.2.061102

DO - 10.1143/APEX.2.061102

M3 - Article

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 6

M1 - 061102

ER -

Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m

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Keywords

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