Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 mu m

Grzegorz Sek*, Pawel Podemski, Janusz Andrzejewski, Jan Misiewicz, Sebastian Hein, Sven Höfling, Alfred Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report on polarization independent 1.55 mu m room temperature edge emission from an InGaAs immersion layer, being a quasi-two-dimensional surrounding of columnar quantum dashes formed during the close stacking self assembled growth. Calculations performed in an 8 band k-p model revealed that the in-plane strain distribution across the immersion layer induces a significant heavy hole-light hole valence states mixing leading to equal transverse electric and transverse magnetic components of the optical transition intensity. (C) 2009 The Japan Society of Applied Physics

Original languageEnglish
Article number061102
Number of pages3
JournalApplied Physics Express
Volume2
Issue number6
DOIs
Publication statusPublished - Jun 2009

Keywords

  • SEMICONDUCTOR OPTICAL AMPLIFIERS
  • ELECTRONIC-STRUCTURE
  • TENSILE
  • DOTS
  • GAIN

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