In situ patterning of ultrasharp dopant profiles in silicon

Simon P. Cooil; Federico Mazzola; Hagen W. Klemm; Gina Peschel; Yuran R. Niu; Alexei A. Zakharov; Michelle Y. Simmons; Thomas Schmidt; D. Andrew Evans; Jill A. Miwa; Justin W. Wells

doi:10.1021/acsnano.6b07359

In situ patterning of ultrasharp dopant profiles in silicon

Simon P. Cooil^*, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, D. Andrew Evans, Jill A. Miwa, Justin W. Wells

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

Original language	English
Pages (from-to)	1683-1688
Number of pages	6
Journal	ACS Nano
Volume	11
Issue number	2
Early online date	9 Feb 2017
DOIs	https://doi.org/10.1021/acsnano.6b07359
Publication status	Published - 28 Feb 2017

Keywords

Low-energy electron patterning
Delta layers
Silicon quantum confinement
2DEG
LEEM
PEEM

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10.1021/acsnano.6b07359

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title = "In situ patterning of ultrasharp dopant profiles in silicon",

abstract = "We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.",

keywords = "Low-energy electron patterning, Delta layers, Silicon quantum confinement, 2DEG, LEEM, PEEM",

author = "Cooil, {Simon P.} and Federico Mazzola and Klemm, {Hagen W.} and Gina Peschel and Niu, {Yuran R.} and Zakharov, {Alexei A.} and Simmons, {Michelle Y.} and Thomas Schmidt and Evans, {D. Andrew} and Miwa, {Jill A.} and Wells, {Justin W.}",

year = "2017",

month = feb,

day = "28",

doi = "10.1021/acsnano.6b07359",

language = "English",

volume = "11",

pages = "1683--1688",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society (ACS)",

number = "2",

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TY - JOUR

T1 - In situ patterning of ultrasharp dopant profiles in silicon

AU - Cooil, Simon P.

AU - Mazzola, Federico

AU - Klemm, Hagen W.

AU - Peschel, Gina

AU - Niu, Yuran R.

AU - Zakharov, Alexei A.

AU - Simmons, Michelle Y.

AU - Schmidt, Thomas

AU - Evans, D. Andrew

AU - Miwa, Jill A.

AU - Wells, Justin W.

PY - 2017/2/28

Y1 - 2017/2/28

N2 - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

AB - We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

KW - Low-energy electron patterning

KW - Delta layers

KW - Silicon quantum confinement

KW - 2DEG

KW - LEEM

KW - PEEM

U2 - 10.1021/acsnano.6b07359

DO - 10.1021/acsnano.6b07359

M3 - Article

AN - SCOPUS:85014188880

SN - 1936-0851

VL - 11

SP - 1683

EP - 1688

JO - ACS Nano

JF - ACS Nano

IS - 2

ER -

In situ patterning of ultrasharp dopant profiles in silicon

Abstract

Keywords

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