In situ patterning of ultrasharp dopant profiles in silicon

Simon P. Cooil*, Federico Mazzola, Hagen W. Klemm, Gina Peschel, Yuran R. Niu, Alexei A. Zakharov, Michelle Y. Simmons, Thomas Schmidt, D. Andrew Evans, Jill A. Miwa, Justin W. Wells

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

Original languageEnglish
Pages (from-to)1683-1688
Number of pages6
JournalACS Nano
Volume11
Issue number2
Early online date9 Feb 2017
DOIs
Publication statusPublished - 28 Feb 2017

Keywords

  • Low-energy electron patterning
  • Delta layers
  • Silicon quantum confinement
  • 2DEG
  • LEEM
  • PEEM

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