Identification of a donor-related recombination channel in ZnO thin films

Matthias Brandt*, Holger von Wenckstern, Gabriele Benndorf, Martin Lange, Christof P. Dietrich, Christian Kranert, Chris Sturm, Ruediger Schmidt-Grund, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Markus R. Wagner, Miran Alic, Christian Nenstiel, Axel Hoffmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I(12). Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I(6) transition related to Al(Zn). The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.

Original languageEnglish
Article number073306
Number of pages4
JournalPhysical Review. B, Condensed matter and materials physics
Issue number7
Publication statusPublished - Feb 2010




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