Identification of a donor-related recombination channel in ZnO thin films

Matthias Brandt; Holger von Wenckstern; Gabriele Benndorf; Martin Lange; Christof P. Dietrich; Christian Kranert; Chris Sturm; Ruediger Schmidt-Grund; Holger Hochmuth; Michael Lorenz; Marius Grundmann; Markus R. Wagner; Miran Alic; Christian Nenstiel; Axel Hoffmann

doi:10.1103/PhysRevB.81.073306

Identification of a donor-related recombination channel in ZnO thin films

Matthias Brandt^*, Holger von Wenckstern, Gabriele Benndorf, Martin Lange, Christof P. Dietrich, Christian Kranert, Chris Sturm, Ruediger Schmidt-Grund, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Markus R. Wagner, Miran Alic, Christian Nenstiel, Axel Hoffmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I(12). Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I(6) transition related to Al(Zn). The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.

Original language	English
Article number	073306
Number of pages	4
Journal	Physical Review. B, Condensed matter and materials physics
Volume	81
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.81.073306
Publication status	Published - Feb 2010

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10.1103/PhysRevB.81.073306

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Brandt, M., von Wenckstern, H., Benndorf, G., Lange, M., Dietrich, C. P., Kranert, C., Sturm, C., Schmidt-Grund, R., Hochmuth, H., Lorenz, M., Grundmann, M., Wagner, M. R., Alic, M., Nenstiel, C., & Hoffmann, A. (2010). Identification of a donor-related recombination channel in ZnO thin films. Physical Review. B, Condensed matter and materials physics, 81(7), Article 073306. https://doi.org/10.1103/PhysRevB.81.073306

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title = "Identification of a donor-related recombination channel in ZnO thin films",

abstract = "An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I(12). Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I(6) transition related to Al(Zn). The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.",

keywords = "EXCITON",

author = "Matthias Brandt and {von Wenckstern}, Holger and Gabriele Benndorf and Martin Lange and Dietrich, {Christof P.} and Christian Kranert and Chris Sturm and Ruediger Schmidt-Grund and Holger Hochmuth and Michael Lorenz and Marius Grundmann and Wagner, {Markus R.} and Miran Alic and Christian Nenstiel and Axel Hoffmann",

year = "2010",

month = feb,

doi = "10.1103/PhysRevB.81.073306",

language = "English",

volume = "81",

journal = "Physical Review. B, Condensed matter and materials physics",

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Brandt, M, von Wenckstern, H, Benndorf, G, Lange, M, Dietrich, CP, Kranert, C, Sturm, C, Schmidt-Grund, R, Hochmuth, H, Lorenz, M, Grundmann, M, Wagner, MR, Alic, M, Nenstiel, C & Hoffmann, A 2010, 'Identification of a donor-related recombination channel in ZnO thin films', Physical Review. B, Condensed matter and materials physics, vol. 81, no. 7, 073306. https://doi.org/10.1103/PhysRevB.81.073306

TY - JOUR

T1 - Identification of a donor-related recombination channel in ZnO thin films

AU - Brandt, Matthias

AU - von Wenckstern, Holger

AU - Benndorf, Gabriele

AU - Lange, Martin

AU - Dietrich, Christof P.

AU - Kranert, Christian

AU - Sturm, Chris

AU - Schmidt-Grund, Ruediger

AU - Hochmuth, Holger

AU - Lorenz, Michael

AU - Grundmann, Marius

AU - Wagner, Markus R.

AU - Alic, Miran

AU - Nenstiel, Christian

AU - Hoffmann, Axel

PY - 2010/2

Y1 - 2010/2

N2 - An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I(12). Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I(6) transition related to Al(Zn). The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.

AB - An excitonic recombination line is observed in photoluminescence spectra of ZnO thin films at 3.3465 eV. The line is labeled I(12). Its appearance was only observed in samples grown on a MgO or heavily aluminum-doped ZnO buffer layer. The properties of the recombination mechanism were probed by photoluminescence and photoluminescence-excitation spectroscopy. The recombination was classified to be an exciton bound to a neutral donor. Both an ionized state and a two-electron satellite transition were observed and could be correlated with the central transition. The excitation channels are similar to those of the well-known I(6) transition related to Al(Zn). The localization energy was calculated to be 29.4 meV. A donor activation energy of 90.8 meV was extrapolated using the Haynes rule for ZnO.

KW - EXCITON

U2 - 10.1103/PhysRevB.81.073306

DO - 10.1103/PhysRevB.81.073306

M3 - Article

SN - 1098-0121

VL - 81

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 7

M1 - 073306

ER -

Identification of a donor-related recombination channel in ZnO thin films

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