Holmium hafnate: an emerging electronic device material

Shojan P. Pavunny; Yogesh Sharma; Sudheendran Kooriyattil; Sita Dugu; Rajesh K. Katiyar; James F. Scott; Ram S. Katiyar

doi:10.1063/1.4915503

Holmium hafnate: an emerging electronic device material

Shojan P. Pavunny^*, Yogesh Sharma, Sudheendran Kooriyattil, Sita Dugu, Rajesh K. Katiyar, James F. Scott, Ram S. Katiyar

^*Corresponding author for this work

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Abstract

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho₂Hf₂O₇ (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E_g of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Original language	English
Article number	112902
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	11
DOIs	https://doi.org/10.1063/1.4915503
Publication status	Published - 16 Mar 2015

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Scott_2015_APL_HolmiumHafnate_FinalPubVersion
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1063/1.4915503
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title = "Holmium hafnate: an emerging electronic device material",

abstract = "We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices. ",

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author = "Pavunny, {Shojan P.} and Yogesh Sharma and Sudheendran Kooriyattil and Sita Dugu and Katiyar, {Rajesh K.} and Scott, {James F.} and Katiyar, {Ram S.}",

note = "Financial support from DOE Grant No. DE-FG02-08ER46526 is acknowledged. S.P.P. is grateful to NSF for financial assistance under Grant No. NSF-EFRI RESTOR #1038272. Y.S. is thankful to IFN-NSF for doctoral fellowship under NSF-RII-0701525 grant.",

year = "2015",

month = mar,

day = "16",

doi = "10.1063/1.4915503",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

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T2 - an emerging electronic device material

AU - Pavunny, Shojan P.

AU - Sharma, Yogesh

AU - Kooriyattil, Sudheendran

AU - Dugu, Sita

AU - Katiyar, Rajesh K.

AU - Scott, James F.

AU - Katiyar, Ram S.

N1 - Financial support from DOE Grant No. DE-FG02-08ER46526 is acknowledged. S.P.P. is grateful to NSF for financial assistance under Grant No. NSF-EFRI RESTOR #1038272. Y.S. is thankful to IFN-NSF for doctoral fellowship under NSF-RII-0701525 grant.

PY - 2015/3/16

Y1 - 2015/3/16

N2 - We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

AB - We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

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DO - 10.1063/1.4915503

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VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112902

ER -

Holmium hafnate: an emerging electronic device material

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