High-temperature phase transitions in SrHfO3: A Raman scattering study

Manoj K. Singh*, Gulab Singh, Tae Hyun Kim, Seiji Kojima, Ram S. Katiyar, J. F. Scott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

SrHfO3 (SHO) is probably the leading gate oxide for the Si chip industry. The material is processed at similar to 400K and annealed at high temperature similar to 1600 K. Unfortunately there are two phase transitions in SrHfO3 in this temperature range, which can affect the quality of the final films processed, especially their channel mobility in SHO-based n-FET. To clarify these transitions and their impact on SrHfO3 processing, we report the temperature dependence of soft phonon modes by Raman spectroscopy. The 1023K Cmcm-I4mcm transition is found to be displacive (no disorder) and nearly second order. Significant effects are also seen in the orthorhombic-orthorhombic Pnma-Cmcm transition at 670 K. Copyright (C) EPLA, 2014

Original languageEnglish
Article number26004
Number of pages6
JournalEPL
Volume107
Issue number2
DOIs
Publication statusPublished - Jul 2014

Keywords

  • SOFT PHONON MODES
  • PEROVSKITE
  • PHOTOLUMINESCENCE
  • (SRTIO3)-O-18
  • SPECTRA
  • SRZRO3
  • SRTIO3

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