Abstract
We report on the high-temperature performance of high-power GaInNAs broad area laser diodes with different waveguide designs emitting in the 1220-1240-nm wavelength range. Large optical cavity laser structures enable a maximum continuous-wave output power of >8.9 W at T = 20 degrees C with emission at 1220 nm and are characterized by low internal losses of 0.5 cm(-1) compared to 2.9 cm(-1) for the conventional waveguide structures. High-power operation up to temperatures of 120 degrees C is observed with output powers of >4 W at T = 90 degrees C. This laser diode showed characteristic temperatures of T(o) = 112 K and T(1) = 378 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1766-1768 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 20 |
| Issue number | 21-24 |
| Publication status | Published - 2008 |
Keywords
- Continuous-wave (CW) lasers
- gallium compounds
- lasers
- nitrogen compounds
- optical pumping
- quantum-well (QW) lasers
- semiconductor lasers
- QUANTUM-WELL LASERS
- INGAAS
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