High power all-quantum-dot-based external cavity modelocked laser

A. D. McRobbie; M. A. Cataluna; S. A. Zolotovskaya; D. A. Livshits; W. Sibbett; E. U. Rafailov

doi:10.1049/el:20070876

High power all-quantum-dot-based external cavity modelocked laser

A. D. McRobbie, M. A. Cataluna, S. A. Zolotovskaya, D. A. Livshits, W. Sibbett, E. U. Rafailov

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

An all-quanturn-dot based external cavity modelocked laser using a quantum-dot gain medium and SESAM is demonstrated for the first time. This laser produces average powers of up to 27 mW and modelocking has been obtained over a range of cavity repetition frequencies from 350 MHz to 1.5 GHz. Additional RF modulation has also been used to further improve the modelocked operation.

Original language	English
Pages (from-to)	812-813
Number of pages	2
Journal	Electronics Letters
Volume	43
DOIs	https://doi.org/10.1049/el:20070876
Publication status	Published - 19 Jul 2007

Keywords

SEMICONDUCTOR-LASER

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10.1049/el:20070876

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abstract = "An all-quanturn-dot based external cavity modelocked laser using a quantum-dot gain medium and SESAM is demonstrated for the first time. This laser produces average powers of up to 27 mW and modelocking has been obtained over a range of cavity repetition frequencies from 350 MHz to 1.5 GHz. Additional RF modulation has also been used to further improve the modelocked operation.",

keywords = "SEMICONDUCTOR-LASER",

author = "McRobbie, {A. D.} and Cataluna, {M. A.} and Zolotovskaya, {S. A.} and Livshits, {D. A.} and W. Sibbett and Rafailov, {E. U.}",

year = "2007",

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doi = "10.1049/el:20070876",

language = "English",

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T1 - High power all-quantum-dot-based external cavity modelocked laser

AU - McRobbie, A. D.

AU - Cataluna, M. A.

AU - Zolotovskaya, S. A.

AU - Livshits, D. A.

AU - Sibbett, W.

AU - Rafailov, E. U.

PY - 2007/7/19

Y1 - 2007/7/19

N2 - An all-quanturn-dot based external cavity modelocked laser using a quantum-dot gain medium and SESAM is demonstrated for the first time. This laser produces average powers of up to 27 mW and modelocking has been obtained over a range of cavity repetition frequencies from 350 MHz to 1.5 GHz. Additional RF modulation has also been used to further improve the modelocked operation.

AB - An all-quanturn-dot based external cavity modelocked laser using a quantum-dot gain medium and SESAM is demonstrated for the first time. This laser produces average powers of up to 27 mW and modelocking has been obtained over a range of cavity repetition frequencies from 350 MHz to 1.5 GHz. Additional RF modulation has also been used to further improve the modelocked operation.

KW - SEMICONDUCTOR-LASER

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DO - 10.1049/el:20070876

M3 - Article

SN - 0013-5194

VL - 43

SP - 812

EP - 813

JO - Electronics Letters

JF - Electronics Letters

ER -

High power all-quantum-dot-based external cavity modelocked laser

Abstract

Keywords

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