High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers

Thomas W. Schlereth; Sven Gerhard; Wolfgang Kaiser; Sven Hofling

doi:10.1109/LPT.2007.902925

High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers

Thomas W. Schlereth^*, Sven Gerhard, Wolfgang Kaiser, Sven Hofling

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on AlGaInAs quantum-dot laser structures emitting at similar to 760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power >= 20 mW has been achieved for temperatures up to 55 degrees C.

Original language	English
Pages (from-to)	1380-1382
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	17-20
DOIs	https://doi.org/10.1109/LPT.2007.902925
Publication status	Published - 2007

Keywords

AlGaInAs quantum dots (QDs)
distributed feedback (DFB) lasers
epitaxial growth
quantum-dot (QD) lasers
MU-M
DIODES
TEMPERATURE

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10.1109/LPT.2007.902925

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title = "High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers",

abstract = "We report on AlGaInAs quantum-dot laser structures emitting at similar to 760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power >= 20 mW has been achieved for temperatures up to 55 degrees C.",

keywords = "AlGaInAs quantum dots (QDs), distributed feedback (DFB) lasers, epitaxial growth, quantum-dot (QD) lasers, MU-M, DIODES, TEMPERATURE",

author = "Schlereth, {Thomas W.} and Sven Gerhard and Wolfgang Kaiser and Sven Hofling",

year = "2007",

doi = "10.1109/LPT.2007.902925",

language = "English",

volume = "19",

pages = "1380--1382",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "17-20",

}

TY - JOUR

T1 - High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers

AU - Schlereth, Thomas W.

AU - Gerhard, Sven

AU - Kaiser, Wolfgang

AU - Hofling, Sven

PY - 2007

Y1 - 2007

N2 - We report on AlGaInAs quantum-dot laser structures emitting at similar to 760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power >= 20 mW has been achieved for temperatures up to 55 degrees C.

AB - We report on AlGaInAs quantum-dot laser structures emitting at similar to 760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power >= 20 mW has been achieved for temperatures up to 55 degrees C.

KW - AlGaInAs quantum dots (QDs)

KW - distributed feedback (DFB) lasers

KW - epitaxial growth

KW - quantum-dot (QD) lasers

KW - MU-M

KW - DIODES

KW - TEMPERATURE

U2 - 10.1109/LPT.2007.902925

DO - 10.1109/LPT.2007.902925

M3 - Article

SN - 1041-1135

VL - 19

SP - 1380

EP - 1382

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 17-20

ER -

High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers

Abstract

Keywords

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