High-performance short-wavelength (similar to 760 nm) AlGaInAs quantum-dot lasers

Thomas W. Schlereth*, Sven Gerhard, Wolfgang Kaiser, Sven Hofling

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We report on AlGaInAs quantum-dot laser structures emitting at similar to 760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power >= 20 mW has been achieved for temperatures up to 55 degrees C.

Original languageEnglish
Pages (from-to)1380-1382
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number17-20
DOIs
Publication statusPublished - 2007

Keywords

  • AlGaInAs quantum dots (QDs)
  • distributed feedback (DFB) lasers
  • epitaxial growth
  • quantum-dot (QD) lasers
  • MU-M
  • DIODES
  • TEMPERATURE

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