TY - JOUR
T1 - High aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio
AU - Kotlyar, MV
AU - O'Faolain, Liam
AU - Wilson, R
AU - Krauss, Thomas Fraser
PY - 2004/7
Y1 - 2004/7
N2 - We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAME operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively. (C) 2004 American Vacuum Society.
AB - We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAME operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively. (C) 2004 American Vacuum Society.
KW - WAVE-GUIDES
KW - INP
UR - http://www.scopus.com/inward/record.url?scp=4944245125&partnerID=8YFLogxK
U2 - 10.1116/1.1767106
DO - 10.1116/1.1767106
M3 - Article
VL - 22
SP - 1788
EP - 1791
JO - Journal of Vacuum Science and Technology B
JF - Journal of Vacuum Science and Technology B
ER -