Height-driven linear polarization of the surface emission from quantum dashes

Anna Musial; Pawel Podemski; Grzegorz Sek; Piotr Kaczmarkiewicz; Janusz Andrzejewski; Pawel Machnikowski; Jan Misiewicz; Sebastian Hein; Andre Somers; Sven Höfling; Johann Peter Reithmaier; Alfred Forchel

doi:10.1088/0268-1242/27/10/105022

Height-driven linear polarization of the surface emission from quantum dashes

Anna Musial^*, Pawel Podemski, Grzegorz Sek, Piotr Kaczmarkiewicz, Janusz Andrzejewski, Pawel Machnikowski, Jan Misiewicz, Sebastian Hein, Andre Somers, Sven Höfling, Johann Peter Reithmaier, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of the nanostructure height on the polarization of the surface emission was systematically investigated for In(Ga) As/InP quantum dashes. Polarization-resolved photoluminescence experiment was compared to theoretical considerations based on the multiband k.p theory and an analytical formula relating the polarization anisotropy to the nano-object geometry was derived. Substantial in-plane structure shape asymmetry induces a pronounced degree of linear polarization in surface emission, which depends strongly not only on the lateral aspect ratio but also on the nanostructure height. Additionally, strongly linearly polarized surface emission (up to 90%) was demonstrated for columnar quantum dashes by combining the in-plane elongation with a significantly increased height.

Original language	English
Article number	105022
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	27
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/27/10/105022
Publication status	Published - Oct 2012

Keywords

1.55 MU-M
OPTICAL ANISOTROPY
LASERS
DOTS
AMPLIFIERS

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10.1088/0268-1242/27/10/105022

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Musial, A., Podemski, P., Sek, G., Kaczmarkiewicz, P., Andrzejewski, J., Machnikowski, P., Misiewicz, J., Hein, S., Somers, A., Höfling, S., Reithmaier, J. P., & Forchel, A. (2012). Height-driven linear polarization of the surface emission from quantum dashes. Semiconductor Science and Technology, 27(10), Article 105022. https://doi.org/10.1088/0268-1242/27/10/105022

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title = "Height-driven linear polarization of the surface emission from quantum dashes",

abstract = "The influence of the nanostructure height on the polarization of the surface emission was systematically investigated for In(Ga) As/InP quantum dashes. Polarization-resolved photoluminescence experiment was compared to theoretical considerations based on the multiband k.p theory and an analytical formula relating the polarization anisotropy to the nano-object geometry was derived. Substantial in-plane structure shape asymmetry induces a pronounced degree of linear polarization in surface emission, which depends strongly not only on the lateral aspect ratio but also on the nanostructure height. Additionally, strongly linearly polarized surface emission (up to 90%) was demonstrated for columnar quantum dashes by combining the in-plane elongation with a significantly increased height.",

keywords = "1.55 MU-M, OPTICAL ANISOTROPY, LASERS, DOTS, AMPLIFIERS",

author = "Anna Musial and Pawel Podemski and Grzegorz Sek and Piotr Kaczmarkiewicz and Janusz Andrzejewski and Pawel Machnikowski and Jan Misiewicz and Sebastian Hein and Andre Somers and Sven H{\"o}fling and Reithmaier, {Johann Peter} and Alfred Forchel",

year = "2012",

month = oct,

doi = "10.1088/0268-1242/27/10/105022",

language = "English",

volume = "27",

journal = "Semiconductor Science and Technology",

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T1 - Height-driven linear polarization of the surface emission from quantum dashes

AU - Musial, Anna

AU - Podemski, Pawel

AU - Sek, Grzegorz

AU - Kaczmarkiewicz, Piotr

AU - Andrzejewski, Janusz

AU - Machnikowski, Pawel

AU - Misiewicz, Jan

AU - Hein, Sebastian

AU - Somers, Andre

AU - Höfling, Sven

AU - Reithmaier, Johann Peter

AU - Forchel, Alfred

PY - 2012/10

Y1 - 2012/10

N2 - The influence of the nanostructure height on the polarization of the surface emission was systematically investigated for In(Ga) As/InP quantum dashes. Polarization-resolved photoluminescence experiment was compared to theoretical considerations based on the multiband k.p theory and an analytical formula relating the polarization anisotropy to the nano-object geometry was derived. Substantial in-plane structure shape asymmetry induces a pronounced degree of linear polarization in surface emission, which depends strongly not only on the lateral aspect ratio but also on the nanostructure height. Additionally, strongly linearly polarized surface emission (up to 90%) was demonstrated for columnar quantum dashes by combining the in-plane elongation with a significantly increased height.

AB - The influence of the nanostructure height on the polarization of the surface emission was systematically investigated for In(Ga) As/InP quantum dashes. Polarization-resolved photoluminescence experiment was compared to theoretical considerations based on the multiband k.p theory and an analytical formula relating the polarization anisotropy to the nano-object geometry was derived. Substantial in-plane structure shape asymmetry induces a pronounced degree of linear polarization in surface emission, which depends strongly not only on the lateral aspect ratio but also on the nanostructure height. Additionally, strongly linearly polarized surface emission (up to 90%) was demonstrated for columnar quantum dashes by combining the in-plane elongation with a significantly increased height.

KW - 1.55 MU-M

KW - OPTICAL ANISOTROPY

KW - LASERS

KW - DOTS

KW - AMPLIFIERS

U2 - 10.1088/0268-1242/27/10/105022

DO - 10.1088/0268-1242/27/10/105022

M3 - Article

SN - 0268-1242

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

M1 - 105022

ER -

Height-driven linear polarization of the surface emission from quantum dashes

Abstract

Keywords

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