Growth of highly resistive BiMnO3 films

W Eerenstein, F D Morrison, J F Scott, N D Mathur

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

BiMnO3 (010) films (100 nm) were grown epitaxially on SrTiO3 (001) and 0.2 at. % Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5x10(7) Omega cm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization. (c) 2005 American Institute of Physics.

Original languageEnglish
Article number101906
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number10
DOIs
Publication statusPublished - 5 Sept 2005

Keywords

  • FERROMAGNETIC PEROVSKITE BIMNO3
  • THIN-FILM
  • FERROELECTRICS
  • POLARIZATION

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