Graded band gap GaInNAs solar cells

F. Langer; S. Perl; S. Höfling; M. Kamp

doi:10.1063/1.4922279

Graded band gap GaInNAs solar cells

F. Langer, S. Perl, S. Höfling, M. Kamp

Research output: Contribution to journal › Article › peer-review

Abstract

Dilute nitride GaInN(Sb)As with a band gap (E_g) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE_g) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

Original language	English
Article number	233902
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	23
DOIs	https://doi.org/10.1063/1.4922279
Publication status	Published - 8 Jun 2015

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10.1063/1.4922279

Hoefling_2015_APL_SolarCells_Final_Pub_Version
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4922279 .
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Quantun Engineered Materials: Quantum engineered materials
Höfling, S. (PI)
The Royal Society
1/08/14 → 31/07/19
Project: Standard

Cite this

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title = "Graded band gap GaInNAs solar cells",

abstract = "Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.",

author = "F. Langer and S. Perl and S. H{\"o}fling and M. Kamp",

note = "This work was financially supported by the “Deutsches Zentrum f{\"u}r Luft- und Raumfahrt e.V.” (DLR) under the project “Solarzellenkonzepte f{\"u}r Raumfahrtgeneratoren der n{\"a}chsten Generation” (SoNG, Contract No. 50RN1301). S.H. gratefully acknowledges the support by the Royal Society and the Wolfson Foundation.",

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doi = "10.1063/1.4922279",

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AU - Langer, F.

AU - Perl, S.

AU - Höfling, S.

AU - Kamp, M.

N1 - This work was financially supported by the “Deutsches Zentrum für Luft- und Raumfahrt e.V.” (DLR) under the project “Solarzellenkonzepte für Raumfahrtgeneratoren der nächsten Generation” (SoNG, Contract No. 50RN1301). S.H. gratefully acknowledges the support by the Royal Society and the Wolfson Foundation.

PY - 2015/6/8

Y1 - 2015/6/8

N2 - Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

AB - Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.

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Graded band gap GaInNAs solar cells

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