Graded band gap GaInNAs solar cells

F. Langer, S. Perl, S. Höfling, M. Kamp

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Original languageEnglish
Article number233902
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume106
Issue number23
DOIs
Publication statusPublished - 8 Jun 2015

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