Giant dielectric permittivity in ferroelectric thin films: domain wall ping pong

A. Quan Jiang; X. Jian Meng; D. Wei Zhang; M. Hyuk Park; S. Yoo; Y. Jin Kim; James Floyd Scott; C. Seong Hwang

doi:10.1038/srep14618

Giant dielectric permittivity in ferroelectric thin films: domain wall ping pong

A. Quan Jiang, X. Jian Meng, D. Wei Zhang, M. Hyuk Park, S. Yoo, Y. Jin Kim, James Floyd Scott, C. Seong Hwang

Research output: Contribution to journal › Article › peer-review

Abstract

The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1^-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

Original language	English
Article number	14618
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep14618
Publication status	Published - 6 Oct 2015

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@article{3dd7e4506c8d499d85791faedcf8ba65,

title = "Giant dielectric permittivity in ferroelectric thin films: domain wall ping pong",

abstract = "The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.",

author = "{Quan Jiang}, A. and {Jian Meng}, X. and {Wei Zhang}, D. and {Hyuk Park}, M. and S. Yoo and {Jin Kim}, Y. and Scott, {James Floyd} and {Seong Hwang}, C.",

note = "This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos. 61225020 and 61176121), and the Program for Professor of Special Appointment (Eastern Scholar) in Shanghai. C.S.H. acknowledges the support of the Global Research Laboratory Program (2012040157) through the National Research Foundation (NRF) of Korea. Date of Acceptance: 02/09/2015",

year = "2015",

month = oct,

day = "6",

doi = "10.1038/srep14618",

language = "English",

volume = "5",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature publishing group",

}

TY - JOUR

T1 - Giant dielectric permittivity in ferroelectric thin films

T2 - domain wall ping pong

AU - Quan Jiang, A.

AU - Jian Meng, X.

AU - Wei Zhang, D.

AU - Hyuk Park, M.

AU - Yoo, S.

AU - Jin Kim, Y.

AU - Scott, James Floyd

AU - Seong Hwang, C.

N1 - This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos. 61225020 and 61176121), and the Program for Professor of Special Appointment (Eastern Scholar) in Shanghai. C.S.H. acknowledges the support of the Global Research Laboratory Program (2012040157) through the National Research Foundation (NRF) of Korea. Date of Acceptance: 02/09/2015

PY - 2015/10/6

Y1 - 2015/10/6

N2 - The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

AB - The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

UR - http://www.nature.com/articles/srep14618#supplementary-information

U2 - 10.1038/srep14618

DO - 10.1038/srep14618

M3 - Article

AN - SCOPUS:84943311484

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 14618

ER -

Giant dielectric permittivity in ferroelectric thin films: domain wall ping pong

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