Giant dielectric permittivity in ferroelectric thin films: domain wall ping pong

A. Quan Jiang, X. Jian Meng, D. Wei Zhang, M. Hyuk Park, S. Yoo, Y. Jin Kim, James Floyd Scott, C. Seong Hwang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)
2 Downloads (Pure)


The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

Original languageEnglish
Article number14618
JournalScientific Reports
Publication statusPublished - 6 Oct 2015


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