Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces

P. Maier; F. Hartmann; J. Gabel; M. Frank; S. Kuhn; P. Scheiderer; B. Leikert; M. Sing; L. Worschech; R. Claessen; Sven Höfling

doi:10.1063/1.4977834

Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO₃/SrTiO₃ interfaces

P. Maier, F. Hartmann, J. Gabel, M. Frank, S. Kuhn, P. Scheiderer, B. Leikert, M. Sing, L. Worschech, R. Claessen, Sven Höfling

Research output: Contribution to journal › Article › peer-review

Abstract

We report gate-tunable memristive switching in patterned LaAlO₃/SrTiO₃ interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching on and -off the inherent memory functionality (memristance). For large and
small gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing,
respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.

Original language	English
Article number	093506
Journal	Applied Physics Letters
Volume	110
Issue number	9
Early online date	3 Mar 2017
DOIs	https://doi.org/10.1063/1.4977834
Publication status	Published - 2017

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Hoefling_2017_APL_MemristanceTransition_AAM
© 2017, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at aip.scitation.org/apl / http://dx.doi.org/10.1063/1.4977834
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@article{2314bd45739f4126aeec2cdf727953ea,

title = "Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces",

abstract = "We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching on and -off the inherent memory functionality (memristance). For large andsmall gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing,respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.",

author = "P. Maier and F. Hartmann and J. Gabel and M. Frank and S. Kuhn and P. Scheiderer and B. Leikert and M. Sing and L. Worschech and R. Claessen and Sven H{\"o}fling",

note = "The authors gratefully acknowledge the support from the state of Bavaria as well as from the Deutsche Forschungsgemeinschaft (FOR1162 and SFB1170).",

year = "2017",

doi = "10.1063/1.4977834",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

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T1 - Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces

AU - Maier, P.

AU - Hartmann, F.

AU - Gabel, J.

AU - Frank, M.

AU - Kuhn, S.

AU - Scheiderer, P.

AU - Leikert, B.

AU - Sing, M.

AU - Worschech, L.

AU - Claessen, R.

AU - Höfling, Sven

N1 - The authors gratefully acknowledge the support from the state of Bavaria as well as from the Deutsche Forschungsgemeinschaft (FOR1162 and SFB1170).

PY - 2017

Y1 - 2017

N2 - We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching on and -off the inherent memory functionality (memristance). For large andsmall gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing,respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.

AB - We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching on and -off the inherent memory functionality (memristance). For large andsmall gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing,respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.

U2 - 10.1063/1.4977834

DO - 10.1063/1.4977834

M3 - Article

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093506

ER -

Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces

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Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO₃/SrTiO₃ interfaces