GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells

Andreas Pfenning; Georg Knebl; Fabian Hartmann; Robert Weih; Manuel Meyer; Andreas Bader; Monika Emmerling; Lukas Worschech; Sven Höfling

doi:10.1063/1.4997497

GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells

Andreas Pfenning, Georg Knebl, Fabian Hartmann, Robert Weih, Manuel Meyer, Andreas Bader, Monika Emmerling, Lukas Worschech, Sven Höfling

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Abstract

We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAs_xSb_1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs_0.07Sb_0.93 prewell), to 2.08 (GaAs_0.09Sb_0.91 prewell) up to 2.36 (GaAs_0.11Sb_0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.

Original language	English
Article number	171104
Journal	Applied Physics Letters
Volume	111
DOIs	https://doi.org/10.1063/1.4997497
Publication status	Published - 26 Oct 2017

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© 2017 The Authors. Published by AIP Publishing. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1063/1.4997497
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@article{953d63e97a7542d7b120cf21ed417fe3,

title = "GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells",

abstract = "We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAsxSb1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs0.07Sb0.93 prewell), to 2.08 (GaAs0.09Sb0.91 prewell) up to 2.36 (GaAs0.11Sb0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.",

author = "Andreas Pfenning and Georg Knebl and Fabian Hartmann and Robert Weih and Manuel Meyer and Andreas Bader and Monika Emmerling and Lukas Worschech and Sven H{\"o}fling",

note = "The authors are grateful for financial support by the state of Bavaria, and the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).",

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day = "26",

doi = "10.1063/1.4997497",

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T1 - GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells

AU - Pfenning, Andreas

AU - Knebl, Georg

AU - Hartmann, Fabian

AU - Weih, Robert

AU - Meyer, Manuel

AU - Bader, Andreas

AU - Emmerling, Monika

AU - Worschech, Lukas

AU - Höfling, Sven

N1 - The authors are grateful for financial support by the state of Bavaria, and the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).

PY - 2017/10/26

Y1 - 2017/10/26

N2 - We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAsxSb1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs0.07Sb0.93 prewell), to 2.08 (GaAs0.09Sb0.91 prewell) up to 2.36 (GaAs0.11Sb0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.

AB - We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAsxSb1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs0.07Sb0.93 prewell), to 2.08 (GaAs0.09Sb0.91 prewell) up to 2.36 (GaAs0.11Sb0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.

U2 - 10.1063/1.4997497

DO - 10.1063/1.4997497

M3 - Article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 171104

ER -

GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells

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