Abstract
Results are presented on the assessment, using a variety of techniques, of methyl, tertiary-butyl, telluride as a potential precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal-organic vapour-phase epitaxy (MOVPE). It is concluded that, despite its low decomposition temperature and the successful growth of HgTe, MeTeBut is a very poor tellurium precursor. It is probable that all unsymmetrical tellurium alkyls containing a methyl group will also be poor tellurium precursors. Crown Copyright (C) 1998 Published by Elsevier Science B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 594-603 |
Number of pages | 10 |
Journal | Journal of Crystal Growth |
Volume | 183 |
Publication status | Published - Feb 1998 |
Keywords
- MOVPE
- (Hg,Cd)Te
- tellurium alkyls
- precursor
- MeTeBut
- II-VI-COMPOUNDS
- GROWTH
- PRECURSORS
- PYROLYSIS
- EPITAXY
- CDTE