@inproceedings{48d3e7dc42404fc39d6b0568eb0d97e7,
title = "Gap states at the interface of ultra-thin oxide and organic films on Si(100)",
abstract = "The formation of gap states during the initial oxidation of Si(100)-2x1 and the adsorption of maleic anhydride on Si(100)-2x1 at room temperature have been followed with photoluminescence measurements and high resolution electron energy loss spectroscopy. We observe that gal? states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. Prolonged exposures to molecular oxygen results in a marked increase of the gap state density. In contrast, repeated cycles of water adsorption and heating to 530 degrees C leads to a thicker oxide film, which exhibits a reduced gap state density. The adsorption of the unsaturated organic molecule maleic anhydride on Si(100)-2x1 does not induce the formation of gap states.",
keywords = "gap states, organic film/silicon interface, ultra-thin oxide, OXIDATION, SI(111)",
author = "T Bitzer and T Rada and Richardson, {N V} and T Dittrich and F Koch",
year = "2001",
doi = "10.4028/www.scientific.net/SSP.76-77.131",
language = "English",
isbn = "3-908450-57-8",
series = "Solid State Phenomena",
publisher = "Scitec Publications",
pages = "131--134",
editor = "M. Heyns and M. Meuris and P. Mertens",
booktitle = "Ultra clean processing of silicon surfaces V",
note = "5th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) ; Conference date: 18-09-2000 Through 20-09-2000",
}