Gap state formation during the initial oxidation of Si(100)-2x1

T Bitzer; T Rada; Neville Vincent Richardson; T Dittrich; F Koch

Gap state formation during the initial oxidation of Si(100)-2x1

T Bitzer, T Rada, Neville Vincent Richardson, T Dittrich, F Koch

Research output: Other contribution

Abstract

High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2x1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H2O at room temperature decrease the density of gap states significantly. (C) 2000 American Institute of Physics. [S0003- 6951(00)03449-5].

Original language	English
Volume	77
Publication status	Published - 4 Dec 2000

Keywords

SI EJECTION
SI(001)
SURFACES
PHOTOEMISSION
DEVICES
TRAPS
LEVEL

Cite this

@misc{876ae76370cc4dc49d8085a3af44ef66,

title = "Gap state formation during the initial oxidation of Si(100)-2x1",

abstract = "High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2x1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H2O at room temperature decrease the density of gap states significantly. (C) 2000 American Institute of Physics. [S0003- 6951(00)03449-5].",

keywords = "SI EJECTION, SI(001), SURFACES, PHOTOEMISSION, DEVICES, TRAPS, LEVEL",

author = "T Bitzer and T Rada and Richardson, {Neville Vincent} and T Dittrich and F Koch",

note = "Appl Phys Lett",

year = "2000",

month = dec,

day = "4",

language = "English",

volume = "77",

type = "Other",

}

TY - GEN

T1 - Gap state formation during the initial oxidation of Si(100)-2x1

AU - Bitzer, T

AU - Rada, T

AU - Richardson, Neville Vincent

AU - Dittrich, T

AU - Koch, F

N1 - Appl Phys Lett

PY - 2000/12/4

Y1 - 2000/12/4

N2 - High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2x1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H2O at room temperature decrease the density of gap states significantly. (C) 2000 American Institute of Physics. [S0003- 6951(00)03449-5].

AB - High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2x1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H2O at room temperature decrease the density of gap states significantly. (C) 2000 American Institute of Physics. [S0003- 6951(00)03449-5].

KW - SI EJECTION

KW - SI(001)

KW - SURFACES

KW - PHOTOEMISSION

KW - DEVICES

KW - TRAPS

KW - LEVEL

M3 - Other contribution

VL - 77

ER -

Gap state formation during the initial oxidation of Si(100)-2x1

Abstract

Keywords

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