Gallium arsenide (GaAs) quantum photonic waveguide circuits

J. Wang, A. Santamato, P. Jiang, D. Bonneau, E. Engin, J.W. Silverstone, M. Lermer, J. Beetz, M. Kamp, S. Höfling, M.G. Tanner, C.M. Natarajan, R.H. Hadfield, S.N. Dorenbos, V. Zwiller, J.L. O'Brien, M.G. Thompson

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.
Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalOptics Communications
Early online date4 Mar 2014
Publication statusPublished - 15 Sept 2014


  • Quantum optics
  • Integrated quantum photonics
  • Quantum interference
  • Entanglement
  • GaAs waveguide
  • Pockels effect


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