Gallium arsenide (GaAs) quantum photonic waveguide circuits

J. Wang; A. Santamato; P. Jiang; D. Bonneau; E. Engin; J.W. Silverstone; M. Lermer; J. Beetz; M. Kamp; S. Höfling; M.G. Tanner; C.M. Natarajan; R.H. Hadfield; S.N. Dorenbos; V. Zwiller; J.L. O'Brien; M.G. Thompson

doi:10.1016/j.optcom.2014.02.040

Gallium arsenide (GaAs) quantum photonic waveguide circuits

J. Wang, A. Santamato, P. Jiang, D. Bonneau, E. Engin, J.W. Silverstone, M. Lermer, J. Beetz, M. Kamp, S. Höfling, M.G. Tanner, C.M. Natarajan, R.H. Hadfield, S.N. Dorenbos, V. Zwiller, J.L. O'Brien, M.G. Thompson

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Abstract

Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

Original language	English
Pages (from-to)	49-55
Number of pages	7
Journal	Optics Communications
Volume	327
Early online date	4 Mar 2014
DOIs	https://doi.org/10.1016/j.optcom.2014.02.040
Publication status	Published - 15 Sept 2014

Keywords

Quantum optics
Integrated quantum photonics
Quantum interference
Entanglement
GaAs waveguide
Pockels effect

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10.1016/j.optcom.2014.02.040

Integrated Quantum Photonic Circuits in Gallium Arsenide before proof
Copyright © 2014 Elsevier B.V. All rights reserved. NOTICE: this is the author’s version of a work that was accepted for publication in Optics Communications. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Optics Communications, 327, 2014. doi:10.1016/j.optcom.2014.02.040
Accepted author manuscript, 1.06 MB

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Wang, J., Santamato, A., Jiang, P., Bonneau, D., Engin, E., Silverstone, J. W., Lermer, M., Beetz, J., Kamp, M., Höfling, S., Tanner, M. G., Natarajan, C. M., Hadfield, R. H., Dorenbos, S. N., Zwiller, V., O'Brien, J. L., & Thompson, M. G. (2014). Gallium arsenide (GaAs) quantum photonic waveguide circuits. Optics Communications, 327, 49-55. https://doi.org/10.1016/j.optcom.2014.02.040

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title = "Gallium arsenide (GaAs) quantum photonic waveguide circuits",

abstract = "Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.",

keywords = "Quantum optics, Integrated quantum photonics, Quantum interference, Entanglement, GaAs waveguide, Pockels effect",

author = "J. Wang and A. Santamato and P. Jiang and D. Bonneau and E. Engin and J.W. Silverstone and M. Lermer and J. Beetz and M. Kamp and S. H{\"o}fling and M.G. Tanner and C.M. Natarajan and R.H. Hadfield and S.N. Dorenbos and V. Zwiller and J.L. O'Brien and M.G. Thompson",

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AU - Wang, J.

AU - Santamato, A.

AU - Jiang, P.

AU - Bonneau, D.

AU - Engin, E.

AU - Silverstone, J.W.

AU - Lermer, M.

AU - Beetz, J.

AU - Kamp, M.

AU - Höfling, S.

AU - Tanner, M.G.

AU - Natarajan, C.M.

AU - Hadfield, R.H.

AU - Dorenbos, S.N.

AU - Zwiller, V.

AU - O'Brien, J.L.

AU - Thompson, M.G.

N1 - This work was supported by the European FP7 project Quantum Integrated Photonics (QUANTIP), the Engineering and Physical Sciences Research Council (EPSRC), the European Research Council (ERC)

PY - 2014/9/15

Y1 - 2014/9/15

N2 - Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

AB - Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

KW - Quantum optics

KW - Integrated quantum photonics

KW - Quantum interference

KW - Entanglement

KW - GaAs waveguide

KW - Pockels effect

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DO - 10.1016/j.optcom.2014.02.040

M3 - Article

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SN - 0030-4018

VL - 327

SP - 49

EP - 55

JO - Optics Communications

JF - Optics Communications

ER -

Gallium arsenide (GaAs) quantum photonic waveguide circuits

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Keywords

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