GaInNAs(Sb) surface normal devices

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, W. Sibbett

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)85-92
Number of pages8
JournalPhysica Status Solidi A-Applications and Materials Science
Volume205
DOIs
Publication statusPublished - Jan 2008

Keywords

  • 1.3 MU-M
  • SEMICONDUCTOR SATURABLE-ABSORBER
  • CHEMICAL-VAPOR-DEPOSITION
  • CONTINUOUS-WAVE OPERATION
  • EMITTING LASERS
  • MODE-LOCKING
  • OPTICAL-PROPERTIES
  • QUANTUM-WELLS
  • ROOM-TEMPERATURE
  • BRAGG REFLECTOR

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