GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

Dirk Bisping*, Damian Pucicki, Marc Fischer, Johannes Koeth, Christian Zimmermann, Pia Weinmann, Sven Höfling, Martin Kamp, Alfred Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm(-1), allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M(2) down to 1.4, high brightness of up to 23 MW/cm(2) .sr, and nearly spatial single-mode emission have been obtained.

Original languageEnglish
Pages (from-to)968-972
Number of pages5
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume15
Issue number3
DOIs
Publication statusPublished - 2009

Keywords

  • Amplifiers
  • continuous-wave (CW) lasers
  • epitaxial growth
  • optical fiber amplifiers
  • optical pumping
  • quantum well lasers
  • semiconductor epitaxial layers
  • semiconductor lasers
  • CONTINUOUS-WAVE OPERATION
  • QUANTUM-DOT LASERS
  • AMPLIFIERS
  • NM
  • WAVELENGTH
  • STABILITY
  • 1.3-MU-M
  • INGAAS
  • SYSTEM

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