Abstract
GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm(-1), allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M(2) down to 1.4, high brightness of up to 23 MW/cm(2) .sr, and nearly spatial single-mode emission have been obtained.
Original language | English |
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Pages (from-to) | 968-972 |
Number of pages | 5 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 15 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- Amplifiers
- continuous-wave (CW) lasers
- epitaxial growth
- optical fiber amplifiers
- optical pumping
- quantum well lasers
- semiconductor epitaxial layers
- semiconductor lasers
- CONTINUOUS-WAVE OPERATION
- QUANTUM-DOT LASERS
- AMPLIFIERS
- NM
- WAVELENGTH
- STABILITY
- 1.3-MU-M
- INGAAS
- SYSTEM