Gain studies on quantum-dot lasers with temperature-stable emission wavelength

Ralph Debusmann; Thomas W. Schlereth; Sven Gerhard; Wolfgang Kaiser; Sven Höfling; Alfred Forchel

doi:10.1109/JQE.2007.911693

Gain studies on quantum-dot lasers with temperature-stable emission wavelength

Ralph Debusmann^*, Thomas W. Schlereth, Sven Gerhard, Wolfgang Kaiser, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.

Original language	English
Pages (from-to)	175-181
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	44
Issue number	1-2
DOIs	https://doi.org/10.1109/JQE.2007.911693
Publication status	Published - 2008

Keywords

gain measurement
modal gain
molecular beam epitaxy (MBE)
self-assembled quantum dots (QD)
semiconductor lasers
temperature stability
WELL LASERS
THRESHOLD
DEPENDENCE
DENSITY
GAP

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10.1109/JQE.2007.911693

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title = "Gain studies on quantum-dot lasers with temperature-stable emission wavelength",

abstract = "In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.",

keywords = "gain measurement, modal gain, molecular beam epitaxy (MBE), self-assembled quantum dots (QD), semiconductor lasers, temperature stability, WELL LASERS, THRESHOLD, DEPENDENCE, DENSITY, GAP",

author = "Ralph Debusmann and Schlereth, {Thomas W.} and Sven Gerhard and Wolfgang Kaiser and Sven H{\"o}fling and Alfred Forchel",

year = "2008",

doi = "10.1109/JQE.2007.911693",

language = "English",

volume = "44",

pages = "175--181",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1-2",

}

TY - JOUR

T1 - Gain studies on quantum-dot lasers with temperature-stable emission wavelength

AU - Debusmann, Ralph

AU - Schlereth, Thomas W.

AU - Gerhard, Sven

AU - Kaiser, Wolfgang

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2008

Y1 - 2008

N2 - In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.

AB - In this paper, a comparative study of the gain spectra of quantum-well (QW) and quantum-dot (QD) lasers is presented. We point out the differences between the gain function of a QD laser and a QW laser and give a qualitative description of the effect that leads to the high wavelength stability of QD lasers. Furthermore, we demonstrate, by means of the gain spectra of an InGaAs and AlInGaAs QD laser, that devices with a high wavelength stability can be manufactured over a wide range of emission energies. The experimentally obtained data are fitted with a theoretical model that describes the gain of a QD ensemble. The characteristic features resulting in the high wavelength stability of QD lasers of 0.072 nm/K are analyzed and discussed.

KW - gain measurement

KW - modal gain

KW - molecular beam epitaxy (MBE)

KW - self-assembled quantum dots (QD)

KW - semiconductor lasers

KW - temperature stability

KW - WELL LASERS

KW - THRESHOLD

KW - DEPENDENCE

KW - DENSITY

KW - GAP

U2 - 10.1109/JQE.2007.911693

DO - 10.1109/JQE.2007.911693

M3 - Article

SN - 0018-9197

VL - 44

SP - 175

EP - 181

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1-2

ER -

Gain studies on quantum-dot lasers with temperature-stable emission wavelength

Abstract

Keywords

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