GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

F. Hartmann; F. Langer; D. Bisping; A. Musterer; Sven Höfling; M. Kamp; A. Forchel; L. Worschech

doi:10.1063/1.4709421

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

F. Hartmann^*, F. Langer, D. Bisping, A. Musterer, Sven Höfling, M. Kamp, A. Forchel, L. Worschech

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 mu m wavelength leads to a pronounced photo- effect with a sensitivities of around 10(3) A/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709421]

Original language	English
Article number	172113
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4709421
Publication status	Published - 23 Apr 2012

Keywords

1.3 MU-M
EPITAXY
GAAS

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10.1063/1.4709421

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title = "GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing",

abstract = "Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 mu m wavelength leads to a pronounced photo- effect with a sensitivities of around 10(3) A/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709421]",

keywords = "1.3 MU-M, EPITAXY, GAAS",

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day = "23",

doi = "10.1063/1.4709421",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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T1 - GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

AU - Hartmann, F.

AU - Langer, F.

AU - Bisping, D.

AU - Musterer, A.

AU - Höfling, Sven

AU - Kamp, M.

AU - Forchel, A.

AU - Worschech, L.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 mu m wavelength leads to a pronounced photo- effect with a sensitivities of around 10(3) A/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709421]

AB - Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 mu m wavelength leads to a pronounced photo- effect with a sensitivities of around 10(3) A/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709421]

KW - 1.3 MU-M

KW - EPITAXY

KW - GAAS

U2 - 10.1063/1.4709421

DO - 10.1063/1.4709421

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172113

ER -

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

Abstract

Keywords

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