GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

F. Hartmann*, F. Langer, D. Bisping, A. Musterer, Sven Höfling, M. Kamp, A. Forchel, L. Worschech

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 mu m wavelength leads to a pronounced photo- effect with a sensitivities of around 10(3) A/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709421]

Original languageEnglish
Article number172113
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
Publication statusPublished - 23 Apr 2012

Keywords

  • 1.3 MU-M
  • EPITAXY
  • GAAS

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