GaAs/AlGaAs quantum cascade lasers

S Hofling; JP Reithmaier; A Forchel

GaAs/AlGaAs quantum cascade lasers

S Hofling^*
, JP Reithmaier
, A Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum cascade lasers for the 10 mu m spectral region were fabricated. With the goal of miniaturization, improvement of device properties, and single mode emission, we have developed lasers with one-dimensional photonic crystals by deeply etched Bragg-mirrors. For the first time nearly lattice matched GaInNAs was successfully grown on GaAs substrates at 590 degrees C, which allows an increase in the carrier confinement.

Original language	Undefined/Unknown
Pages (from-to)	366-373
Number of pages	8
Journal	Tm-Technisches messen
Volume	72
Issue number	6
Publication status	Published - Jun 2005

Keywords

quantum-cascade laser
microlaser
distributed Bragg-reflector
infrared
gas sensing
dilute nitrides
CONTINUOUS-WAVE OPERATION
ROOM-TEMPERATURE OPERATION
MU-M
SEMICONDUCTOR
SUPERLATTICE

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Cite this

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title = "GaAs/AlGaAs quantum cascade lasers",

abstract = "Quantum cascade lasers for the 10 mu m spectral region were fabricated. With the goal of miniaturization, improvement of device properties, and single mode emission, we have developed lasers with one-dimensional photonic crystals by deeply etched Bragg-mirrors. For the first time nearly lattice matched GaInNAs was successfully grown on GaAs substrates at 590 degrees C, which allows an increase in the carrier confinement.",

keywords = "quantum-cascade laser, microlaser, distributed Bragg-reflector, infrared, gas sensing, dilute nitrides, CONTINUOUS-WAVE OPERATION, ROOM-TEMPERATURE OPERATION, MU-M, SEMICONDUCTOR, SUPERLATTICE",

author = "S Hofling and JP Reithmaier and A Forchel",

year = "2005",

month = jun,

language = "Undefined/Unknown",

volume = "72",

pages = "366--373",

journal = "Tm-Technisches messen",

issn = "0171-8096",

publisher = "de Gruyter",

number = "6",

}

TY - JOUR

T1 - GaAs/AlGaAs quantum cascade lasers

AU - Hofling, S

AU - Reithmaier, JP

AU - Forchel, A

PY - 2005/6

Y1 - 2005/6

N2 - Quantum cascade lasers for the 10 mu m spectral region were fabricated. With the goal of miniaturization, improvement of device properties, and single mode emission, we have developed lasers with one-dimensional photonic crystals by deeply etched Bragg-mirrors. For the first time nearly lattice matched GaInNAs was successfully grown on GaAs substrates at 590 degrees C, which allows an increase in the carrier confinement.

AB - Quantum cascade lasers for the 10 mu m spectral region were fabricated. With the goal of miniaturization, improvement of device properties, and single mode emission, we have developed lasers with one-dimensional photonic crystals by deeply etched Bragg-mirrors. For the first time nearly lattice matched GaInNAs was successfully grown on GaAs substrates at 590 degrees C, which allows an increase in the carrier confinement.

KW - quantum-cascade laser

KW - microlaser

KW - distributed Bragg-reflector

KW - infrared

KW - gas sensing

KW - dilute nitrides

KW - CONTINUOUS-WAVE OPERATION

KW - ROOM-TEMPERATURE OPERATION

KW - MU-M

KW - SEMICONDUCTOR

KW - SUPERLATTICE

M3 - Article

SN - 0171-8096

VL - 72

SP - 366

EP - 373

JO - Tm-Technisches messen

JF - Tm-Technisches messen

IS - 6

ER -